TITLE

Effect of crystal stoichiometry on activation efficiency in Si implanted, rapid thermal annealed GaAs

AUTHOR(S)
Von Neida, A. R.; Pearton, S. J.; Stavola, M.; Caruso, R.
PUB. DATE
December 1986
SOURCE
Applied Physics Letters;12/22/1986, Vol. 49 Issue 25, p1708
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A dramatic dependence on crystal stoichiometry has been observed for the donor activation efficiency of low doses of Si ions implanted into undoped semi-insulating GaAs. Samples from liquid encapsulated Czochralski crystals grown from melts containing As concentrations varying from 47 1/2 to 65 at. % were implanted with 100 keV 29Si ions at a dose of 5×1012 cm-2. Following a rapid, capless annealing cycle (950 °C, 5 s), the surface-depletion corrected activation efficiency ranged from 26 to 91%, with the higher efficiencies for higher As concentrations. In contrast, co-implantation of As and Si into standard (50 at. % As) GaAs resulted in an increase in activation efficiency from 59 to 68% for optimum As doses.
ACCESSION #
9821722

 

Related Articles

  • Thin HfO2 films grown on Si(100) by atomic oxygen assisted molecular beam epitaxy. Yan, Z.J.; Xu, R.; Wang, Y.Y.; Chen, S.; Fan, Y.L.; Jiang, Z.M. // Applied Physics Letters;7/5/2004, Vol. 85 Issue 1, p85 

    Thin high-k dielectric HfO2 films are deposited on Si(100) substrate by molecular beam epitaxy using Hf and atomic oxygen source. The composition of the film is determined to be stoichiometric HfO2. The very flat surface of the deposited film with a root mean square roughness less than 0.16 nm...

  • Microwave annealing for preparation of crystalline hydroxyapatite thin films. Adams, Daniel; Malgas, Gerald F.; Smith, R. D.; Massia, S. P.; Alford, T. L.; Mayer, J. W. // Journal of Materials Science;Nov2006, Vol. 41 Issue 21, p7150 

    A sol was spun on single crystal silicon substrates at a spin-rate of 3000–5000 rpm followed by a low temperature cure to form a stable sol–gel/silicon structure. Good quality crystalline HA films of thickness ∼300–400 nm were obtained by annealing the sol–gel/Si...

  • Effect of Thermal Annealing of Radiation Defects on the Noise Characteristics of Silicon p-n Structures with a Thin Multiplication Region. Baranouski&icaron;, A.K.; Kuchinski&icaron;, P.V.; Savenok, E.D. // Semiconductors;Jan2003, Vol. 37 Issue 1, p50 

    Specific features of changes in the noise spectral density and the lifetime of minority charge carriers in Si p-n structures with a thin multiplication region under thermal annealing of radiation defects were studied. It is shown that the change in the frequency characteristics of noise in p-n...

  • Nature of the nuclei for thermal donor formation in silicon (or another variant of accelerated oxygen diffusion). Neımash, V. B.; Puzenko, E. A.; Kabaldin, A. N.; Kraıchinskiı, A. N.; Kras’ko, N. N. // Semiconductors;Dec99, Vol. 33 Issue 12, p1279 

    The influence of preliminary heat treatment at 800 °C on the accumulation and annealing kinetics of thermal donors formed at 450 °C in silicon single crystals is investigated by performing four-point measurements of the electrical resistivity. The activation energies for the generation and...

  • Interfacial Structures of Si[sub 3]N[sub 4] on Si (100) & Si(111). Chou, L. J.; Huang, M. L.; Hsieh, J. Y.; Chueh, Y. L.; Gwo, S.; Hsueh, C. C.; Pan, Sam // International Journal of Modern Physics B: Condensed Matter Phys;11/20/2002, Vol. 16 Issue 28/29, p4493 

    The initial stages of NH[sub 3] exposure on Si (100) & (111) at different substrate temperatures and post annealing in different ambient gases have been investigated. On the Si (100) surface, at 850 °C and very high (∼1050 °C) temperatures, NH[sub 3] dissociated and nitridized the Si...

  • Effect of annealing ambient on the removal of oxide precipitates in high-dose oxygen implanted.... Seraphin, Supapan; Krause, Stephen J.; Roitman, Peter; Simons, David S.; Cordts, Bernhard F. // Applied Physics Letters;12/2/1991, Vol. 59 Issue 23, p3003 

    Examines the effect of annealing ambient on the precipitate removal processes in high-dose oxygen implanted silicon. Surface analyses used in the study; Rate of removal of oxide precipitates from the top silicon layer; Reduction of the removal due to the oxynitride complex formation.

  • Formation of luminescent silicon by laser annealing of a-Si:H. El-Kader, K.M.A.; Oswald, J. // Applied Physics Letters;5/9/1994, Vol. 64 Issue 19, p2555 

    Details the preparation of luminescent silicon by laser annealing of amorphous hydrogenated silicon deposited on silica substrates. Exhibition of photoluminescence (PL) comparable to PL spectra of porous silicon; Study of the morphology of the sample; Absence of degradation of the PL spectra.

  • Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix. Kan, E.W.H.; Choi, W.K.; Leoy, C.C.; Chim, W.K.; Antoniadis, D.A.; Fitzgerald, E.A. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p2058 

    A double-step annealing profile has been used to synthesize germanium nanodots embedded in silicon oxide matrix with low defects, good crystallinity, good size distribution, and shape. A significant reduction in the photoluminescence was observed for samples annealed at temperature higher than...

  • Effect of annealing time and temperature on the formation of threading and projected range dislocations in 1 MeV boron implanted Si. Jones, K. S.; Jasper, Craig; Hoover, Allen // Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1664 

    The effect of annealing temperature and time on the formation of threading dislocations was investigated for high energy boron implants into silicon. 1 MeV B[sup +] was implanted at a dose of 1x10[sup 14]/cm[sup 2] into <100> Si wafers. The wafers were subsequently annealed in either a rapid...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics