TITLE

Transient enhanced diffusion of phosphorus in silicon

AUTHOR(S)
Cowern, N. E. B.; Godfrey, D. J.; Sykes, D. E.
PUB. DATE
December 1986
SOURCE
Applied Physics Letters;12/22/1986, Vol. 49 Issue 25, p1711
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The diffusion of phosphorus implanted at low dose into crystalline silicon has been investigated as a function of dose and furnace anneal time. A major feature is an initial transient diffusion enhancement, comparable with the well-known transient in boron diffusion. The transient is larger than expected from published studies using rapid thermal annealing.
ACCESSION #
9821719

 

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