Limited reaction processing: Growth of III-V epitaxial layers by rapid thermal metalorganic chemical vapor deposition

Reynolds, S.; Vook, D. W.; Gibbons, J. F.
December 1986
Applied Physics Letters;12/22/1986, Vol. 49 Issue 25, p1720
Academic Journal
We have demonstrated a new technique for III-V epitaxial layer growth combining rapid thermal processing and metalorganic chemical vapor deposition. This technique yields enhanced layer thickness control and abrupt interfaces while maintaining a high growth rate (≥10 Å/s). Multilayer structures have been grown with smooth, featureless surfaces and good electrical quality (Nd=2×1016 cm-3, μn=3000 cm2/V s) using trimethylarsenic and trimethylgallium.


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