High resolution scanning photoluminescence characterization of semi-insulating GaAs using a laser scanning microscope

Marek, J.; Elliot, A. G.; Wilke, V.; Geiss, R.
December 1986
Applied Physics Letters;12/22/1986, Vol. 49 Issue 25, p1732
Academic Journal
Spatially resolved photoluminescence properties of semi-insulating, liquid encapsulated Czochralski-grown GaAs substrates are analyzed with a laser scanning microscope. The improved resolution of the laser scanning microscope results in the observation of single dislocations within the subgrain boundaries of the polyganized dislocation cell network for the first time by photoluminescence. Both the cell structure and the Cottrell cloud are clearly resolved.


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