One-dimensional transport in quantum well wire-high electron mobility transistor

Yuh, Perng-fei; Wang, K. L.
December 1986
Applied Physics Letters;12/22/1986, Vol. 49 Issue 25, p1738
Academic Journal
A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.


Related Articles

  • Electron depletion due to bias of a T-shaped field-effect transistor. Georgakis, G. A.; Niu, Qian // Journal of Applied Physics;7/15/1995, Vol. 78 Issue 2, p640 

    Deals with a study which modeled and examined a T-shaped field-effect transistor made out of a pair of two-dimensional electron gases (2DEG). Role played by a simple numerical model; Condition that occurs when the gate voltage exceeds a certain critical value; Creation of the 2DEG.

  • Threshold voltage shifts in decananometre-gate AlGaN/GaN HEMTs. Endoh, A.; Yamashita, Y.; Hikosaka, K.; Matsui, T.; Hiyamizu, S.; Mimura, T. // Electronics Letters;4/13/2006, Vol. 42 Issue 8, p490 

    Decananometre-T-shaped-Ni/Pt/Au-gate AlGaN/GaN HEMTs on sapphire substrates are fabricated and their DC characteristics measured. The negative shifts of threshold voltages occur below 5–6 of channel aspect ratio Lg/d, where Lg is the gate length and d is the AlGaN barrier layer thickness....

  • Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors. Chu, R.M.; Zheng, Y.D.; Zhou, Y.G.; Gu, S.L.; Shen, B.; Zhang, R.; Jiang, R.L.; Han, P.; Shi, Y. // Applied Physics A: Materials Science & Processing;2003, Vol. 77 Issue 5, p669 

    In this letter, we investigate the carrier features in AlGaN/InGaN/GaN heterostructure field-effect transistors. A study of charge control in the AlGaN/InGaN/GaN structure is performed by self-consistently solving Schrödinger's equation in conjunction with Poisson's equation. The results...

  • A 30-nm-Gate Field-Effect Transistor. Obolenskiı, S. V.; Kitaev, M. A. // Technical Physics Letters;May2000, Vol. 26 Issue 5, p408 

    The fabrication technology is developed for and characteristics are investigated of a GaAs Schottky-barrier field-effect transistor (SBFET) with an effective gate length of 30 nm. The SBFET power gain cutoff frequency is 150 GHz. The noise factor at 12-37 GHz is comparable with that of...

  • InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage. Jung-Hui Tsai; Wen-Shiung Lour; Tzu-Yen Weng; Chien-Ming Li // Semiconductors;Feb2010, Vol. 44 Issue 2, p223 

    InGaP/InGaAs doped-channel direct-coupled field-effect transistor logic (DCFL) with relatively low supple voltage is demonstrated by two-dimensional analysis. In the integrated enhancement/depletion-mode transistors, subband and two-dimensional electron gas (2DEG) are formed in the InGaAs strain...

  • Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates. Alekseev, A.; Aleksandrov, S.; Byrnaz, A.; Velikovskiĭ, L.; Velikovskiĭ, I.; Krasovitskiĭ, D.; Pavlenko, M.; Petrov, S.; Pogorel’skiĭ, M.; Pogorel’skiĭ, Yu.; Sokolov, I.; Sokolov, M.; Stepanov, M.; Tkachenko, A.; Shkurko, A.; Chalyĭ, V. // Technical Physics Letters;Apr2008, Vol. 34 Issue 4, p300 

    We report preliminary results on the transfer of the ammonia MBE technology of AlN/AlGaN/GaN/AlGaN heterostructures to silicon substrates. Optimization of the growth conditions allowed the number of macroscopic cracks in the epilayers to be reduced and ensured the growth of heterostructures with...

  • THZ DETECTION BY RESONANT 2-D PLASMONS IN FIELD EFFECT DEVICES. Peralta, Xomalin; Knap, Wojtek // International Journal of High Speed Electronics & Systems;Jun2002, Vol. 12 Issue 2, p491 

    We demonstrate the resonant detection by the two-dimensional electron plasma waves in gated two-dimensional electron gas. Such detection was demonstrated for two devices: for a field effect transistor (FET) THz detector, where the standing 2-D plasmon is tuned to the frequency of the THz...

  • Room-temperature determination of two-dimensional electron gas concentration and mobility in.... Schacham, S.E.; Mena, R.A.; Haugland, E.J.; Alterovitz, S.A. // Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1283 

    Determines the room-temperature two-dimensional electron gas (2DEG) concentration and mobility in heterostructures. Use of the simultaneous fits of the longitudinal and transverse voltages; Efficacy of the room-temperature data in estimating the 2DEG concentration.

  • Wave function deformation and mobility of a two-dimensional electron gas in a backgated.... Kurobe, A.; Frost, J.E.F.; Grimshaw, M.P.; Ritchie, D.A.; Jones, G.A.C.; Pepper, M. // Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2522 

    Examines the transport properties of two-dimensional electron gas in GaAs-AlGaAs heterostructure as a function of deformation and mobility. Comparison of experimental results to theoretical calculations on shape of wave function; Increase of mobility; Observation of steeper carrier density...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics