TITLE

One-dimensional transport in quantum well wire-high electron mobility transistor

AUTHOR(S)
Yuh, Perng-fei; Wang, K. L.
PUB. DATE
December 1986
SOURCE
Applied Physics Letters;12/22/1986, Vol. 49 Issue 25, p1738
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.
ACCESSION #
9821703

 

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