Atomic structure of the GaAs/Si interface

Hull, R.; Rosner, S. J.; Koch, S. M.; Harris, J. S.
December 1986
Applied Physics Letters;12/22/1986, Vol. 49 Issue 25, p1714
Academic Journal
The atomic structure of the GaAs/Si(100) interface is studied using high resolution transmission electron microscopy. The samples studied were grown by molecular beam epitaxy using a conventional two-step growth process of a relatively low-temperature (405 °C) GaAs buffer layer followed by a higher temperature (575 °C) device layer. Following this growth procedure, the interface is found to be atomically rough with nonuniform distributions of steps, and to contain regions of disrupted crystallinity. These regions are found to be more prevalent in material which has undergone only low-temperature (buffer layer) GaAs deposition. By using the atomic resolution microscope at the National Center for Electron Microscopy, Lawrence Berkeley Laboratories, we are also able to atomically image the same area of interface along orthogonal <011> directions, observing qualitatively similar structures.


Related Articles

  • High-resolution electron microscopy study of (Ca,Sr)F2/GaAs grown by molecular-beam epitaxy. Héral, Hélène; Bernard, Louis; Rocher, André; Fontaine, Chantal; Munoz-Yague, Antonio // Journal of Applied Physics;3/15/1987, Vol. 61 Issue 6, p2410 

    Presents a study which examined high-resolution electron microscopy study of (calcium, strontium)(Ca,Sr) fluorine[sub 2]/gallium arsenic grown by molecular-beam epitaxy. Surface morphology of the (Ca,Sr) F[sub 2] layers;Transmission electron microscopy observations.

  • As precipitate redistribution in Si δ-doped low-temperature GaAs. Cheng, T. M.; Chang, C. Y.; Huang, J. H. // Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p5697 

    Focuses on a study which characterized the redistribution of arsenic precipitates in silicon δ-doped gallium arsenide through x-ray diffractometry and transmission electron microscopy. Experimental details; Results and discussion; Conclusion.

  • Electrical activity and structural evolution correlations in laser and thermally annealed As-implanted Si specimens. Parisini, A.; Bourret, A.; Armigliato, A.; Servidori, M.; Solmi, S.; Fabbri, R.; Regnard, J. R.; Allain, J. L. // Journal of Applied Physics;3/1/1990, Vol. 67 Issue 5, p2320 

    Provides information on a study concerning the electrical activity and structural evolution of arsenic and silicon specimens which are laser-annealed and thermally annealed. Application of thermal annealing in silicon and arsenic; Process of transmission electron microscopy and double-crystal...

  • Relief of surface stress at steps during displacive adsorption of As on Si(111). Zheng, C. X.; Tang, W. X.; Jesson, D. E. // Applied Physics Letters;5/14/2012, Vol. 100 Issue 20, p201602 

    The displacive adsorption of As on 1 × 1 Si(111) is examined using surface electron microscopy. High temperature adsorption experiments are used to reduce the As chemical potential and identify regions of enhanced As incorporation in the vicinity of steps. This is explained by a reduction in...

  • Transmission electron microscopy analysis of heavily As-doped, laser, and thermally annealed layers in silicon. Dokumaci, O.; Rousseau, P.; Luning, S.; Krishnamoorthy, V.; Jones, K. S.; Law, M. E. // Journal of Applied Physics;7/15/1995, Vol. 78 Issue 2, p828 

    Presents a study which discussed the transmission electron microscopy analysis of heavily As-doped, laser and thermally annealed layers in silicon. Change in the density of dislocation loops; Role played by arsenic; Step taken in order to get high conductivity.

  • Effect of As overpressure during annealing on the nonuniformity of activation efficiency in Si-implanted GaAs layer. Sato, Takashi; Tajima, Michio; Ishida, Koichi // Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p755 

    The effects of As overpressure during annealing on nonuniformity, i.e., the variations of sheet carrier concentration and Hall mobility across wafers, have been studied for Si-implanted undoped semi-insulating GaAs. The nonuniformity was found to be suppressed by annealing under high As...

  • Conduction in illuminated GaAs/AlxGa1-xAs heterostructures. I. Experiment. Hurd, C. M.; McAlister, S. P.; McKinnon, W. R.; Falt, C. E.; Day, D. J.; Miner, C. J.; SpringThorpe, A. J. // Journal of Applied Physics;3/15/1987, Vol. 61 Issue 6, p2244 

    Part I. Presents a study which measured the Hall carrier concentration n[sub H] and the Hall mobility μ [sub H] (T) for some n-type, silicon-doped gallium arsenic/aluminum [sub x] gallium [sub 1-x] arsenic heterostructures for different levels of continuous illumination by a red light...

  • Effect of substrate temperature on Si compensation in delta-doped InSb and AlxIn1-xSb grown... Liu, W.K.; Goldammer, K.J.; Santos, M.B. // Journal of Applied Physics;7/1/1998, Vol. 84 Issue 1, p205 

    Presents a study of the dopant compensation for the silicon (Si) delta-doped indium stibium (Sb) samples grown on gallium arsenic (GaAs) (001) substrates. Identification of hall-effect measurements; Performance of hall-effect measurements at magnetic fields up to 0.2 T; Information on electric...

  • Structural Defects in Si-Doped III-V Nitrides. Zakharov, Dmitri N.; Liliental-Weber, Zuzanna; Yan Gao; Hu, Evelyn // Journal of Electronic Materials;Jul2006, Vol. 35 Issue 7, p1543 

    Transmission electron microscopy has been used to study undoped and Si-doped InGaN/GaN layers. The doped layers show formation of extrinsic dislocation loops. These defects are not formed in the undoped samples. The highly Si-doped layers show failure of selective photoelectrochemical...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics