Si-TaSi2 in situ junction eutectic composite diodes

Ditchek, Brian M.; Levinson, Mark
December 1986
Applied Physics Letters;12/15/1986, Vol. 49 Issue 24, p1656
Academic Journal
Nearly ideal diodes have been fabricated using the in situ junctions present in Si-TaSi2 semiconductor-metal eutectic composites. The composites, prepared by directional solidification at the eutectic composition, have a high density of TaSi2 rods in a quasi-single crystalline P-doped, n-type Si matrix. Analysis of the diodes using current-voltage and capacitance-voltage techniques yields a TaSi2/Si Schottky barrier height of 0.62 eV and evidence that the voltage-dependent depletion zones can be made comparable to the interrod spacing to produce a ‘‘pinch-off’’ condition.


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