Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor deposition

Feketa, D.; Chan, K. T.; Ballantyne, J. M.; Eastman, L. F.
December 1986
Applied Physics Letters;12/15/1986, Vol. 49 Issue 24, p1659
Academic Journal
A graded-index separate-confinement strained-layer quantum well laser with pseudomorphic Ga0.63In0.37As quantum well was grown by metalorganic chemical vapor deposition. The lasing wavelength is 0.99 μm at 300 K and the average threshold current density of broad area 146×363 μm devices is 195 A/cm2.


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