Molecular beam epitaxial growth of the II-V semiconductor compound Zn3As2

Chelluri, B.; Chang, T. Y.; Ourmazd, A.; Dayem, A. H.; Zyskind, J. L.; Srivastava, A.
December 1986
Applied Physics Letters;12/15/1986, Vol. 49 Issue 24, p1665
Academic Journal
We report the first molecular beam epitaxial growth of the II-V semiconducting compound Zn3As2. Commensurate growth of the tetragonal crystal was obtained in the temperature range 300–360 °C on InP. Growth on GaAs was incommensurate due to larger lattice mismatch. The unintentionally doped material is p type. At room temperature, p∼5×1018 cm-3, μ=43 cm2/V s, and the absorption edge is at 0.99 eV. Low-temperature photoluminescence and Hall data suggest that the lowest acceptor level is very close in energy to the valence-band maxima. Optical absorption data suggest that the band gap associated with these valence-band maxima is indirect in nature. The direct band gap is slightly larger.


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