TITLE

Widely separate wavelength switching of single quantum well laser diode by injection-current control

AUTHOR(S)
Tokuda, Yasunori; Tsukada, Noriaki; Fujiwara, Kenzo; Hamanaka, Koichi; Nakayama, Takashi
PUB. DATE
December 1986
SOURCE
Applied Physics Letters;12/15/1986, Vol. 49 Issue 24, p1629
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It is demonstrated for the first time that by injection-current control, the lasing wavelength was able to be switched from the lowest (n=1) quantized state transition to the second (n=2) transition for a single quantum well laser diode. The separation in energy was as wide as >50 meV. This novel function of a laser was realized as a result of appropriately increased threshold gain. This diode, moreover, acted as a multiple wavelength-emitting laser.
ACCESSION #
9821653

 

Related Articles

  • Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes. Kneissl, Michael; Treat, David W.; Teepe, Mark; Miyashita, Naoko; Johnson, Noble M. // Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2386 

    We demonstrate ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes operating under continuous-wave (cw) conditions. The laser diodes were grown on sapphire substrates by metalorganic chemical vapor deposition. Under pulsed bias conditions, we have achieved threshold current densities as...

  • Effect of compositionally graded and superlattice buffer layers on the device performance of graded barrier quantum well heterostructure laser diodes. Givens, M. E.; Mawst, L. J.; Zmudzinski, C. A.; Emanuel, M. A.; Coleman, J. J. // Applied Physics Letters;2/9/1987, Vol. 50 Issue 6, p301 

    The device performance of graded barrier quantum well laser diodes with various buffer layer structures grown by metalorganic chemical vapor deposition has been studied. Devices having four structures (a GaAs buffer layer only, a compositionally graded buffer layer, a superlattice buffer layer,...

  • Gain characteristics of InGaN/GaN quantum well diode lasers. Song, Y.-K.; Kuball, M.; Nurmikko, A. V.; Bulman, G. E.; Doverspike, K.; Sheppard, S. T.; Weeks, T. W.; Leonard, M.; Kong, H. S.; Dieringer, H.; Edmond, J. // Applied Physics Letters;3/23/1998, Vol. 72 Issue 12 

    We have investigated spectroscopically the gain characteristics of InGaN quantum well (QW) diode lasers. While the transparency condition can be reached at a moderate current density, the filling of localized band-edge states is a prerequisite for achieving lasing in this profoundly nonrandom...

  • Voltage-controlled Q switching of InGaAs/InP single quantum well lasers. Berthold, K.; Levi, A. F. J.; Tanbun-Ek, T.; Logan, R. A.; Chu, S. N. G. // Applied Physics Letters;11/6/1989, Vol. 55 Issue 19, p1940 

    The light emission characteristics of high performance InGaAs/InP single quantum well laser diodes with a monolithically integrated intracavity loss modulator have been investigated. We demonstrate efficient voltage-controlled tuning of the lasing threshold current over more than one order of...

  • Gain characteristics of strained quantum well lasers. Welch, D. F.; Streifer, W.; Schaus, C. F.; Sun, S.; Gourley, P. L. // Applied Physics Letters;1/1/1990, Vol. 56 Issue 1, p10 

    InGaAs/AlGaAs laser diode arrays fabricated with differing amounts of In in the quantum well active layer are characterized by threshold currents of 115 A/cm2, transparency currents of 50 A/cm2, optical losses of 3 cm-1, and wavelengths to 960 nm for In compositions of 20%. Gain coefficient...

  • 4 W quasi-continuous-wave output power from 2 microm AlGaAsSb/InGaAsSb single-quantum-well.... Garbuzov, D.Z.; Martinelli, R.U. // Applied Physics Letters;6/2/1997, Vol. 70 Issue 22, p2931 

    Examines fabricated aluminum gallium arsenic/indium gallium antimony single-quantum-well (SWQ) laser diodes emitting at 2 microm. Exhibition of cavity lengths by uncoated SQW lasers; Factors contributing to the deterioration of SQW laser diodes performance; Analysis on maximum differential...

  • The dual wavelength Bi-vertical cavity surface-emitting laser. Carlin, J. F.; Stanley, R. P. // Applied Physics Letters;8/16/1999, Vol. 75 Issue 7, p908 

    Presents a monolithically integrated vertical coupled cavity surface-emitting laser diode which exhibits stable laser emission at two design wavelengths simultaneously. Action of the laser emission as a optical pump for the quantum wells in the longer cavity; Maintenance of a stable emission at...

  • 175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 microm. Choi, H.K.; Turner, G.W. // Applied Physics Letters;5/20/1996, Vol. 68 Issue 21, p2936 

    Examines the continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers. Growth of lasers on indium arsenide substrates by molecular beam epitaxy; Determination of the emission wavelengths of the lasers; Exhibition of pulsed threshold current density.

  • Threshold currents of 1.55...m InGaAs/InGaAsP multiple quantum well laser diodes. Kakimoto, Syoichi; Takagi, Kazuhisa; Watanabe, Hitoshi; Higuchi, Hideo // Journal of Applied Physics;8/15/1998, Vol. 84 Issue 4, p1820 

    Presents information relating to the experimental and theoretical investigation of threshold currents of 1.55 ...m InGaAs/InGaAsP multiple quantum well (MQW) with distributed feedback (DFB) laser diodes (LDs). Consistency of the LDs; Reference to the changing of barrier composition; Information...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics