Observation of discrete resistance levels in large area graded gap diodes at low temperatures

Judd, T.; Couch, N. R.; Beton, P. H.; Kelly, M. J.; Kerr, T. M.; Pepper, M.
December 1986
Applied Physics Letters;12/15/1986, Vol. 49 Issue 24, p1652
Academic Journal
We have investigated the low-temperature properties of a GaAs n-i-n diode where the intrinsic region consists of a linearly graded gap of AlGaAs, and is surrounded by lightly doped GaAs regions. The current-voltage (I-V) characteristics are strongly asymmetric and are dominated by the graded cap. Unstable I-V characteristics are obtained in forward bias. Random switching is seen between resistance levels. This is ascribed to single electron events at traps near the abrupt heterojunction of the graded gap—the first such observation in a large area device.


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