TITLE

Low-temperature ion beam enhanced etching of tungsten films with xenon difluoride

AUTHOR(S)
Bensaoula, A.; Ignatiev, A.; Strozier, J.; Wolfe, J. C.
PUB. DATE
December 1986
SOURCE
Applied Physics Letters;12/15/1986, Vol. 49 Issue 24, p1663
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The spontaneous and ion enhanced etching of sputter deposited tungsten films has been studied. The etch rates have been measured as a function of various etch parameters with striking differences found as a function of sample temperatures. The spontaneous etch rate is found to be totally suppressed at temperatures below 170 K, and concomitantly the ion enhanced etch rate is increased. With these two points in mind, it is shown that ion beam enhanced etching of W with XeF2 at moderately low temperatures could be used to greatly improve the ratio of the ion enhanced etch rate over the spontaneous etch rate. This unique condition could be used to achieve high aspect ratio structures with vertical walls and opens up the possibility of direct ion beam pattern definition.
ACCESSION #
9821636

 

Related Articles

  • Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress. Bosul Kim; Chong, Eugene; Do Hyung Kim; Yong Woo Jeon; Dae Hwan Kim; Sang Yeol Lee // Applied Physics Letters;8/8/2011, Vol. 99 Issue 6, p062108 

    Effect of trap-density of amorphous InGaZnO thin film transistors (a-IGZO TFTs) were studied using different analysis of x-ray photoelectron spectroscopy (XPS) depth profile and density of states (DOSs). To change trap-densities systematically, rf-power was varied to cause different effect on...

  • Use of thin AlGaAs and InGaAs stop-etch layers for reactive ion etch processing of III-V compound semiconductor devices. Cooper, C. B.; Salimian, S.; MacMillan, H. F. // Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2225 

    Reactive ion etching is important for III-V device fabrication. Commonly encountered applications include the need to remove an epitaxial layer selectively from underlying layers and the need for definition of mesas and other structures with carefully controlled dimensions. We present results...

  • A Si0.7Ge0.3 strained-layer etch stop for the generation of thin layer undoped silicon. Godbey, D.; Hughes, H.; Kub, F.; Twigg, M.; Palkuti, L.; Leonov, P.; Wang, J. // Applied Physics Letters;1/22/1990, Vol. 56 Issue 4, p373 

    The use of a Si0.7Ge0.3 strained layer as an etch stop in silicon-based materials is reported. The etch rates were characterized through silicon and a 60 nm Si0.7Ge0.3 strained layer. The etch rate through undoped silicon was 17–20 nm/min, while the etch rate through the Si0.7Ge0.3 layer...

  • Selective wet etching of GeSbTe phase-change thin films in thermal lithography with tetramethylammonium. Deng, Changmeng; Geng, Yongyou; Wu, Yiqun // Applied Physics A: Materials Science & Processing;Sep2011, Vol. 104 Issue 4, p1091 

    In this paper, we study GeSbTe phase-change film as a promising inorganic photoresist using organic alkaline: tetramethylammonium hydroxide (TMAH) solution, instead of inorganic alkali or acid as etchant. The basic etching properties are investigated by prior and posterior annealing GeSbTe...

  • Density variation of tungsten films sputtered over topography. Tait, R. N.; Dew, S. K.; Smy, T.; Brett, M. J. // Journal of Applied Physics;10/15/1991, Vol. 70 Issue 8, p4295 

    Deals with a study which detailed the measurement of density and resistivity of sputtered tungsten films as a function of angle-of-vapor incidence. Step taken to confirm density predictions; Applications of the results of the measurements; Motive for etching films deposited over vias.

  • ICP Etching and Structure Study of PECVD SiC Films. Shi, J.; Choi, W. K.; Chor, E. F. // International Journal of Modern Physics B: Condensed Matter Phys;11/20/2002, Vol. 16 Issue 28/29, p4318 

    Results of Induction Coupled Plasma (ICP) etching of as-prepared and annealed PECVD hydrogenated amorphous silicon carbide (a-Si[sub 1-x]C[sub x]:H) films using CF[sub 4]/O[sub 2] chemistry are presented. The etch rate of the annealed films decreased with an increase in annealing temperature....

  • Ultrathin silicon membranes to study supercurrent transport in crystalline semiconductors. van Huffelen, W.M.; de Boer, M.J.; Klapwijk, T.M. // Applied Physics Letters;5/27/1991, Vol. 58 Issue 21, p2438 

    Describes the development of a two-step anisotropic etching process to fabricate thin silicon membranes used to study supercurrent transport in semiconductor coupled weak links. Implantation process involved; Observation of simultaneous occurrence of tunnel behavior and Josephson coupling.

  • Wet etching of gold films compatible with high T[sub c] superconducting thin films. Eidelloth, W.; Sandstrom, R.L. // Applied Physics Letters;9/23/1991, Vol. 59 Issue 13, p1632 

    Describes a wet etching process for selective patterning or removing gold layers on top of high temperature YBa[sub 2]Cu[sub 3]O[sub 7] thin films. Aqueous solutions used as etchants for gold; Resolution of fabricated structures; Effectiveness of the etchant for secondary electron microscopy...

  • Screw dislocations in substrates used for high temperature superconductor thin films. Eissler, D.; Wang, H.S.; Dietsche, W. // Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1292 

    Examines the chemical etching of substrates for higher temperature superconductor thin films. Imaging of the structures by atomic force and optical microscopes; Description of the dislocation density in the bare substrate; Identification of the defects in the substrate.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics