TITLE

Focused ion beam induced deposition of gold

AUTHOR(S)
Shedd, G. M.; Lezec, H.; Dubner, A. D.; Melngailis, J.
PUB. DATE
December 1986
SOURCE
Applied Physics Letters;12/8/1986, Vol. 49 Issue 23, p1584
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A finely focused ion beam is scanned over a surface on which a local gas ambient of dimethyl gold hexafluoro acetylacetonate is created by a directed miniature nozzle. The incident ions induce the selective deposition of gold along the path traced by the beam. The 15-keV Ga+ ion beam current is 100 pA and the beam diameter is 0.5 μm. Gold lines of 0.5 μm width and Gaussian profile are written. The film growth rate corresponds to five atoms deposited per incident ion. The focused ion beam deposited films contained 15% Ga, but less than 5% of other impurities, such as O or C. Deposition was also observed with broad ion beams of 750 eV Ar+ and 50 keV Si+. The resistivity of the films varied from 2×10-5 to 1.3×10-3 Ω cm.
ACCESSION #
9821622

 

Related Articles

  • Binary semiconductor In2Te3 for the application of phase-change memory device. Hao Zhu; Kai Chen; Zhongyang Ge; Hanni Xu; Yi Su; Jiang Yin; Yidong Xia; Zhiguo Liu // Journal of Materials Science;Jul2010, Vol. 45 Issue 13, p3569 

    Nonvolatile phase-change memory devices with 500 nm contact hole based on In2Te3 were successfully fabricated by using focused ion beam, pulsed laser deposition, and dc magnetic sputtering techniques. In2Te3 films were characterized by using differential thermal analysis, X-ray diffraction, and...

  • Reduction of anatase TiO2 on Si(111) by ion beam sputtering. Medicherla, V. R. R.; Mohanta, R. R.; Mohanta, K. L.; Nayak, Nimai C.; Choudhary, S.; Majumder, S.; Solanki, V.; Varma, Shikha; Phase, D. M.; Sathe, V. // AIP Conference Proceedings;7/23/2012, Vol. 1461 Issue 1, p403 

    Titanium dioxide (TiO2) is deposited on Si(111) substrate by Pulsed Laser Deposition (PLD) technique and is investigated using Raman Spectroscopy and X-ray Photoelectron Spectroscopy (XPS) techniques. Raman Spectroscopy indicates that the as-deposited TiO2 film is in anatase phase. After...

  • Preparation of diamondlike carbon films by high-intensity pulsed-ion-beam deposition. Johnston, Gregory P.; Tiwari, Prabhat; Rej, Donald J.; Davis, Harold A.; Waganaar, William J.; Muenchausen, Ross E.; Walter, Kevin C.; Nastasi, Michael; Schmidt, Howard K.; Kumar, Nalin; Lin, Boyang; Tallant, David R.; Simpson, Regina L.; Williams, David B.; Qiu, Xiamei // Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p5949 

    Describes the preparation of diamondlike carbon films by high-intensity pulsed-ion-beam deposition (HIPIBD). Description of diamondlike carbon; Advantages shared by HIPIBD with pulsed-laser deposition; Illustration and description of the deposition configuration used in the study.

  • Beam induced deposition of an ultraviolet transparent silicon oxide film by focused gallium ion.... Ogasawara, M.; Kariya, M. // Applied Physics Letters;2/5/1996, Vol. 68 Issue 6, p732 

    Examines the beam induced deposition of an ultraviolet silicon oxide film by focused gallium ion beam. Dependence of the optical transmittance on the source gas and the irradiation conditions; Repair of Levenson-type phase shift mask for krypton fluoride lithography; Proposal of a scaling to...

  • Structural characteristics of CeO2 films grown on biaxially textured nickel (001). Wang, Rong-ping; Pan, Shao-hua; Zhou, Yue-liang; Hao Zhang; Xiang-xin Guo; Xu-ming Xiong; Hui-bin Lu; Zheng-hao Zhan; Guo-zhen Yang // Journal of Applied Physics;8/15/1998, Vol. 84 Issue 4, p1994 

    Focuses on a study conduted usingion beam assisted pulsed laser deposition for the growth of the preferential (001) orientation cerium dioxide (CeO2) films on biaxially textured nickel (Ni) substrates. Measurement of the x-ray diffraction (XRD) patterns for the CeO2 films and target; Derivation...

  • In-plane aligned Pr[sub 6]O[sub 11] buffer layers by ion-beam assisted pulsed laser deposition.... Betz, V.; Holzapfel, B. // Applied Physics Letters;11/17/1997, Vol. 71 Issue 20, p2952 

    Presents ion beam assisted laser deposition method to highly orientate praseodymium oxide thin films for YBa[sub 2]Cu[sub 3]Y[sub 7-delta] film deposition. Use of a low divergence radio frequency plasma source; Analysis of the dependence of in-plane orientation on ion-to-atom ratio and...

  • Ion-assisted pulsed-laser deposition. Reade, R.P.; Church, S.R.; Russo, R.E. // Review of Scientific Instruments;Jun95, Vol. 66 Issue 6, p3610 

    Discusses the use of ion bombardment on the surface of a substrate during deposition of a thin film [ion assisted (IA) deposition] to control thin-film crystalline orientation and phase. Pulsed-laser deposition; Ion-assisted pulsed-laser deposition system; Major areas of potential application;...

  • Development of microstructure in Cr and Cr/CoCrPt films made by pulsed laser deposition. Shima, M.; Ross, C. A. // Journal of Applied Physics;1/15/2003, Vol. 93 Issue 2, p945 

    Cr films and Cr/CoCrPt bilayer films have been grown using ion-beam-assisted pulsed laser deposition (PLD). High mobility conditions such as a substrate temperature above 350 °C, a low deposition rate, and a high laser energy promote the formation of a {100} bcc crystallographic preferred...

  • Void formation in pulsed laser induced via/contact hole filling. Marella, Paul F.; Tuckerman, David B.; Pease, R. Fabian // Applied Physics Letters;6/25/1990, Vol. 56 Issue 26, p2625 

    Metal (Au, Cu, and Al-1% Cu) layers sputter deposited over vias and contact holes of varying diameter and aspect ratio are melted and planarized by irradiation with either a 600 ns pulse duration flashlamp-pumped dye laser or a 35 ns pulse duration excimer laser. High aspect ratio (>=1) vias and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics