TITLE

Composition dependence of Au/InxAl1-xAs Schottky barrier heights

AUTHOR(S)
Lin, C. L.; Chu, P.; Kellner, A. L.; Wieder, H. H.; Rezek, Edward A.
PUB. DATE
December 1986
SOURCE
Applied Physics Letters;12/8/1986, Vol. 49 Issue 23, p1593
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The surface barrier heights [lowercase_phi_synonym]bn and room-temperature band gaps Eg of Si-doped InxAl1-xAs layers grown by molecular beam epitaxy on n-type (100) oriented InP substrates have been determined as a function of composition with capacitance versus voltage, internal photoemission, photoluminescence, and double-crystal x-ray rocking curve measurements for 0.450.78, n-type surfaces might be accumulated and p-type surfaces are likely to be inverted.
ACCESSION #
9821617

 

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