Excitation mechanism in thin-film electroluminescent devices

Okamoto, Kenji; Miura, Shoshin
December 1986
Applied Physics Letters;12/8/1986, Vol. 49 Issue 23, p1596
Academic Journal
Time-resolved emission spectra of ZnS:TbF thin films in photoluminescence and electroluminescence were measured and compared within a relatively short delay. It was concluded that the excitation mechanism of the Tb center involves energy transfer from the ZnS host in which the Tb-related center acts as an efficient energy source for the excitation of the 4f8 electronic system in the Tb3+ ions. In addition to the ZnS:TbF thin film, a similar excitation mechanism was found to exist in the ZnS:Mn thin film. It is proposed that the TbF complex center and Mn act as an isoelectronic center or deep electron trap in ZnS thin films.


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