Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti

Levine, B. F.; Willens, R. H.; Bethea, C. G.; Brasen, D.
December 1986
Applied Physics Letters;12/8/1986, Vol. 49 Issue 23, p1608
Academic Journal
Experiments are reported on the lateral photoeffect in a novel type of amorphous superlattice consisting of 6 Ã… of Ti and 13 Ã… of Si grown on Si substrate. The spectral, temperature, bias voltage, and time dependences have been measured for this new position sensitive detector.


Related Articles

  • Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate. Levine, B. F.; Willens, R. H.; Bethea, C. G.; Brasen, D. // Applied Physics Letters;12/1/1986, Vol. 49 Issue 22, p1537 

    The lateral photoeffect in a new type of amorphous superlattice film, consisting of 6 Ã… of Ti and 13 Ã… of Si grown on a Si substrate, is discussed. The photovoltage varies extremely linearly with light spot position and can thus be used in accurate position sensitive detectors.

  • Dispersion control in two-dimensional superlattice photonic crystal slab waveguides by atomic layer deposition. Gaillot, D. P.; Graugnard, E.; Blair, J.; Summers, C. J. // Applied Physics Letters;10/29/2007, Vol. 91 Issue 18, p181123 

    The frequency and dispersion of photonic bands in two-dimensional triangular-based superlattice photonic crystal Si slab waveguides were manipulated using atomic layer deposition. The samples were conformally coated with increasing thicknesses of TiO2 and characterized by polarized...

  • Enhancement and quenching of Berreman polaritons in SiO2/TiO2 and Al2O3/Pt superlattices. Wold, E.; Bremer, J.; Hunderi, O.; Frigerio, J. M.; Parjadis, G.; Rivory, J. // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1739 

    Presents a study which examined the optical properties of silicon oxide/titanium oxide/ and aluminum[sub2]oxygen[sub3]/plutonium superlattice films. Experimental details; Results and discussion; Conclusions.

  • High-resolution photovoltaic position sensing with Ti/Si superlattices. Willens, R. H.; Levine, B. F.; Bethea, C. G.; Brasen, D. // Applied Physics Letters;12/15/1986, Vol. 49 Issue 24, p1647 

    A detector to sense the position of a beam of light with a resolution of less than 100 Ã… has been fabricated with a Ti/Si amorphous superlattice on p-type Si. There are two regions of photovoltaic sensitivity, a low sensitivity region having a response of 1.6 mV/mm and a high sensitivity...

  • Band gap and activation energy in amorphous silicon doping-modulated superlattices. Zhang, D. H.; Haneman, D. // Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1392 

    It has been found that both the activation energy and optical energy gap of amorphous silicon doping-modulated nipi... superlattices vary consistently with i layer thickness. There is a pronounced maximum at an i layer thickness of approximately 14 nm. The occurrence of this maximum, and the...

  • Atomic structure at the LaSi2-x/Si(100) interface. Qian, J. J.; Wang, Y. T.; Ho, J.; Hsu, C. C. // Applied Physics Letters;7/2/1990, Vol. 57 Issue 1, p43 

    Interfaces between Si(100) and LaSi2-x lattices formed by rapid thermal annealing at ∼900 °C for 10 s have been studied using high-resolution transmission electron microscopy. The experimental results show that the C axis of the LaSi2-x unit cell points to the <332>Si direction. A model...

  • A Study of Structural Perfection of Interfaces in Si/SiGe Superlattices. Vdovin, V. I.; Shcherbachev, K. D.; Mironov, M.; Parry, C. P.; Parker, E. H. C. // Crystallography Reports;Jul2000, Vol. 45 Issue 4, p661 

    A complex investigation into the structural perfection of the Si/SiGe superlattices grown by molecular-beam epitaxy at different temperatures of the Si substrate has been carried out by high-resolution X-ray diffraction analysis, secondary ion mass spectrometry (SIMS), and transmission electron...

  • Peculiarities of structural–phase states in ternary alloys Ni3(Mn, Ti). Gribov, Yu. A.; Klopotov, A. A.; Tailashev, A. S.; Potekaev, A. I.; Kozlov, E. V. // Russian Physics Journal;Jan2010, Vol. 53 Issue 1, p71 

    The results of investigation of structural and physical properties of ternary alloys Ni3(Mn, Ti) are presented. A correlation between their physical and structural properties is revealed. The presence of a minimum is established in the curve for the long-range atomic order parameter in the...

  • Titanium disilicide formation on heavily doped silicon substrates. Beyers, Robert; Coulman, Don; Merchant, Paul // Journal of Applied Physics;6/1/1987, Vol. 61 Issue 11, p5110 

    Presents information on a study which investigated titanium disilicide formation on heavily doped silicon substrates with sheet resistance measurements, elemental depth profiling, and transmission electron microscopy. Methodology of the study; Results and discussion; Conclusion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics