Electron spin resonance study of hydrogenation effects in polycrystalline silicon

Ballutaud, Dominique; Aucouturier, Marc; Babonneau, Florence
December 1986
Applied Physics Letters;12/8/1986, Vol. 49 Issue 23, p1620
Academic Journal
Electron spin resonance spectra obtained on polycrystalline silicon produced by annealing of chemical vapor deposition silicon are investigated before and after plasma hydrogenation of the material. Before hydrogenation, two paramagnetic defects are observed, one of them remaining unidentified (g=2.0084). Hydrogenation decreases the total spin density, but the two defects are affected differently; the defect with g=2.0084 is more efficiently passivated. The results are discussed in terms of the inter- and intragranular nature of the paramagnetic defects and of hydrogen diffusivity in the polycrystal.


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