High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windows

Thornton, R. L.; Welch, D. F.; Burnham, R. D.; Paoli, T. L.; Cross, P. S.
December 1986
Applied Physics Letters;12/8/1986, Vol. 49 Issue 23, p1572
Academic Journal
Silicon impurity induced disordering has been used to fabricate lasers with reduced facet absorption (facet windows) exhibiting enhanced catastrophic facet damage levels over comparable nonwindow devices. Power levels of 1.2 W cw were obtained from uncoated output facet devices and 2.1 W cw were obtained for a device with a coated output facet. Evidence is presented that the window region formed by silicon diffusion is a low-loss waveguide which confines the propagating wave, increasing the efficiency of the device.


Related Articles

  • Integrability and disorder in mesoscopic systems: Application to orbital magnetism. Richter, Klaus; Ullmo, Denis; Jalabert, Rodolfo A. // Journal of Mathematical Physics;Oct96, Vol. 37 Issue 10, p5087 

    Examines integrability and disorder in mesoscopic systems. Application of theory of weak disorder effects in small structures to the magnetic response of non-interacting electrons confined in integrable geometries; Averaging procedures for describing experimental situations in terms of one- and...

  • Kinetics of uniform and nonuniform orderings accompanying second-order phase transitions. Fel’dman, É. P.; Stefanovich, L. I. // JETP Letters;6/25/96, Vol. 63 Issue 12, p983 

    The kinetics of an order–disorder second-order phase transition in systems with two equivalent equilibrium states is investigated on the basis of the Ginzburg–Landau model using a statistical approach. It is shown that both uniform and nonuniform orderings can be realized depending...

  • Precise determination of the critical percolation threshold for the three-dimensional "Swiss cheese" model using a growth algorithm. Lorenz, Christian D.; Ziff, Robert M. // Journal of Chemical Physics;2/22/2001, Vol. 114 Issue 8 

    Precise values for the critical threshold for the three-dimensional "Swiss cheese" continuum percolation model have been calculated using extensive Monte Carlo simulations. These simulations used a growth algorithm and memory blocking scheme similar to what we used previously in...

  • Laser-induced short- and long-range orderings of Co nanoparticles on SiO2. Favazza, C.; Trice, J.; Krishna, H.; Kalyanaraman, R.; Sureshkumar, R. // Applied Physics Letters;4/10/2006, Vol. 88 Issue 15, p153118 

    Laser irradiation of ultrathin Co films leads to pattern formation by dewetting with short-range order (SRO) as well as long-range order (LRO). When a 1.5 nm thick Co film is irradiated by a single laser beam, a monomodal size distribution of particles with average diameter of 31±10 nm and...

  • Absorption edge of silicon from solar cell spectral response measurements. Keevers, M.J.; Green, M.A. // Applied Physics Letters;1/9/1995, Vol. 66 Issue 2, p174 

    Determines the optical absorption coefficient of crystalline silicon near the band edge. Use of sensitive photocurrent measurements on high efficiency silicon solar cells; Resolution of absorption coefficient values discrepancy; Role of disorder theory in understanding the absorption edge of...

  • Disordering of Si-implanted GaAs-AlGaAs superlattices by rapid thermal annealing. Lee, S.-Tong; Braunstein, G.; Fellinger, P.; Kahen, K. B.; Rajeswaran, G. // Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2531 

    We have studied the disordering phenomenon in GaAs-AlGaAs superlattices induced by Si implantation followed by rapid thermal annealing. Disordering has been detected in superlattices implanted with 220 keV Si+ at doses ≥1×1015 cm-2 and annealed at 1050 °C for 10 s. The amount of...

  • Computer simulation of disordering and amorphization by Si and Au recoils in 3C-SiC. Gao, F.; Weber, W. J. // Journal of Applied Physics;4/15/2001, Vol. 89 Issue 8 

    Molecular dynamics has been employed to study the disordering and amorphization processes in SiC irradiated with Si and Au ions. The large disordered domains, consisting of interstitials and antisite defects, are created in the cascades produced by Au primary knock-on atoms (PKAs); whereas Si...

  • Disordering of ZnSe/ZnS strained-layer superlattices by Si ion implantation. Saitoh, Tohru; Yokogawa, Toshiya; Narusawa, Tadashi // Applied Physics Letters;8/21/1989, Vol. 55 Issue 8, p735 

    Disordering of ZnSe/ZnS strained-layer superlattices(SLSs) induced by Si ion implantation and subsequent low-temperature thermal annealing was confirmed. Si ions were implanted (100 keV, 1×1016 ions/cm2 ) into SLSs (140 Å ZnSe-140 Å ZnS, ten periods). By secondary-ion mass...

  • Influence of disorder and a parallel magnetic field on a quantum cascade laser. Apalkov, V. M.; Chakraborty, Tapash // Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p697 

    The luminescence spectra of a quantum cascade laser (QCL) in a strong magnetic field is influenced significantly by the presence of disorder (charged or neutral) in the system. An externally applied magnetic field parallel to the electron plane causes a redshift of the luminescence peak in the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics