Contact structure formed in the Ni/Al/Si system due to rapid thermal melting

Katz, A.; Komem, Y.
December 1986
Applied Physics Letters;12/1/1986, Vol. 49 Issue 22, p1508
Academic Journal
The interface reaction induced by means of rapid thermal melting (RTM) of the Ni(30 nm)/Al(10 nm)/Si system, using heat treatment times of a few seconds at temperatures around the aluminum melting point, has been investigated. The RTM occurred at the Al-Si eutectic melting temperature (577 °C). As a result of this melting a polycrystalline intermediate layer, 60 nm thick, composed of NiSi and Ni2Si was formed adjacent to the Si substrate with a relative smooth interface while the Al was repelled to the outer region of the contact and two successive separate layers of polycrystalline Al3Ni and Ni(Al0.5Si0.5) were formed, both 10 nm thick. The results indicate that RTM can be used to obtain a unique interface reaction in a controlled manner.


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