Work function reduction of a tungsten surface due to cesium ion bombardment

Tompa, G. S.; Carr, W. E.; Seidl, M.
December 1986
Applied Physics Letters;12/1/1986, Vol. 49 Issue 22, p1511
Academic Journal
The reduction of the work function of a polycrystalline W surface due to Cs+ bombardment has been investigated in the incident energy range below 500 eV. Upon exposure of the surface to a Cs+ beam, the work function decreases until a steady state is reached with a total Cs+ dose of less than 1×1016 ions/cm2. A minimum steady state work function surface is produced at an incident energy of ≊40 eV and the steady state work function rapidly increases with bombarding energy. Coverages are significantly lower than that produced on Mo for the same bombarding energies. Auger electron spectroscopy is used to confirm surface coverages. The cesium surface concentration is determined by reflection, sputtering, and implantation.


Related Articles

  • In situ barrier formation using rapid thermal annealing of a tungsten nitride/polycrystalline silicon structure. Lee, Byung Hak; Byung Hak Lee; Lee, Kee Sun; Kee Sun Lee; Sohn, Dong Kyun; Dong Kyun Sohn; Byun, Jeong Soo; Jeong Soo Byun; Han, Chang Hee; Chang Hee Han; Park, Ji-Soo; Ji-Soo Park; Han, Sang Beom; Sang Beom Han; Park, Jin Woon; Jin Woon Park // Applied Physics Letters;5/1/2000, Vol. 76 Issue 18 

    This letter describes the use of rapid thermal annealing (RTA) to form a barrier layer applicable to the gate electrode in dynamic random access memory devices with a stacked structure [tungsten nitride (WN[sub x])/polycrystalline Si (poly-Si)]. After RTA, the reactively sputtered amorphous...

  • Ferroelectric and pyroelectric properties of rare earth based tungsten-bronze compounds. Parida, B.; Das, Piyush; Padhee, R.; Choudhary, R. // Journal of Materials Science: Materials in Electronics;Jan2013, Vol. 24 Issue 1, p305 

    Complex polycrystalline materials [LiPbRWTiNbO (R = Dy, Sm)] of the tungsten bronze structural family have been synthesized using a high-temperature solid-state reaction (mixed-oxide) technique. The formation of the single phase compounds was checked using preliminary X-ray structural...

  • Phosphorus redistribution in a WSi2/polycrystalline-silicon gate structure during furnace annealing. Torres, J.; Thomas, O.; Jourdain, D.; Madar, R.; Perio, A.; Senateur, J. P. // Journal of Applied Physics;2/1/1988, Vol. 63 Issue 3, p732 

    Focuses on a study that investigated the phosphorus redistribution in a tungsten sulfide/polycrystalline-silicon after the furnace annealing. Methodology; Results; Discussion.

  • Transistor action in novel GaAs/W/GaAs structures. Derkits, G. E.; Harbison, J. P.; Levkoff, J.; Hwang, D. M. // Applied Physics Letters;5/5/1986, Vol. 48 Issue 18, p1220 

    Structures containing thin polycrystalline layers of W embedded in essentially single crystal GaAs have been grown by molecular beam epitaxy. The W layers exhibit resistivities of 90–300 μΩ cm and Schottky barriers to both substrate and overgrown GaAs. The structures can act as...

  • Variation of the Electronic and Adsorption Properties of GaAs(100) in the Transition from an As- to Ga-Rich Surface. Benemanskaya, G. V.; Daıneka, D. V.; Frank-Kamenetskaya, G. É. // Physics of the Solid State;May2002, Vol. 44 Issue 5, p989 

    This paper reports on a threshold photoemission study of the variation of electronic properties occurring as Cs is adsorbed on GaAs(100) and the surface transfers gradually from the As- to Ga-rich state. The ionization energy and integrated photoemission current are studied as functions of the...

  • Experimental and theoretical study of temperature dependent exciton delocalization and relaxation in anthracene thin films. Tai-Sang Ahn; Müller, Astrid M.; Al-Kaysi, Rabih O.; Spano, Frank C.; Norton, Joseph E.; Beljonne, David; Brédas, Jean-Luc; Bardeen, Christopher J. // Journal of Chemical Physics;2/7/2008, Vol. 128 Issue 5, p054505 

    The spectroscopy of solid anthracene is examined both experimentally and theoretically. To avoid experimental complications such as self-absorption and polariton effects, ultrathin polycrystalline films deposited on transparent substrates are studied. To separate the contributions from different...

  • Electron States of Europium Atoms on the Oxidized Tungsten Surface. Davydov, S. Yu. // Technical Physics Letters;Apr2001, Vol. 27 Issue 4, p295 

    The charge state of europium (Eu) atoms adsorbed on the oxidized tungsten surface is evaluated. An energy band diagram of the adsorption system is proposed for large and small Eu coverages. The adsorption energy of Eu atoms is estimated.

  • Tracing fast changing temperature on laser-pulsed metal surfaces by micropyrometry. Schäfer, B.; Bostanjoglo, O. // Review of Scientific Instruments;Dec1993, Vol. 64 Issue 12, p3598 

    The surface temperature of pulse laser heated tungsten targets was determined by a high-speed micropyrometric method. Using a blue line of the heat radiation, a temporal/spatial resolution of 2 ns/10 μm is achieved. Temperatures were traced in the range from 2800 K to the boiling point of...

  • Photoconductivity of pyrolytic CdS films alloyed with Cs. Maiorova, T.; Kluyev, V.; Samofalova, T. // Semiconductors;May2011, Vol. 45 Issue 5, p567 

    The investigation of the influence of Cs alloy on recombination processes has been carried out for the pyrolytic CdS films. The effect of photomemory has been observed for such structures, both pure and alloyed. Cs impurity introduction leads to a five- to tenfold photocurrent increase in...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics