Model for heteroepitaxial growth of CdTe on (100) oriented GaAs substrate

Cohen-Solal, G.; Bailly, F.; Barbé, M.
December 1986
Applied Physics Letters;12/1/1986, Vol. 49 Issue 22, p1519
Academic Journal
A model is described, based on chemical bonding and lattice matching considerations, to account for the heteroepitaxy of CdTe on (100) GaAs substrate. The two main features of the proposed model are that the initial growth of CdTe starts with the formation of stable clusters of chemically bond Te, and that two types of cluster configurations are obtained depending only on the atomic structure of the (100)GaAs surface: the first one, made up of tetrahedral unit cells is formed on an As-deficient surface and leads to (111) orientation, whereas the second one, formed by twin-tetrahedral structures developed on an As- or Ga-stabilized surface gives rise to (100) orientation.


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