Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films

Chang, R. P. H.; Fiory, A. T.
December 1986
Applied Physics Letters;12/1/1986, Vol. 49 Issue 22, p1534
Academic Journal
Mixed aluminum-phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200 °C) are found to yield low interface state densities near the band edges which are sufficient for observing both p- and n-channel-type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO2 interfaces.


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