Time-of-flight measurements of minority-carrier transport in p-silicon

Tang, D. D.; Fang, F. F.; Scheuermann, M.; Chen, T. C.
December 1986
Applied Physics Letters;12/1/1986, Vol. 49 Issue 22, p1540
Academic Journal
The electric field dependence of electron mobilities in p-type silicon with doping density of 4.5×1016 cm-3 at room temperature was measured using a time-of-flight technique. It was found that the electron mobility at zero field is very close to that in n-type silicon of equivalent doping density; however, it decreases rapidly with electric field in a range from 0 to 0.2 kV/cm and more gradually at higher fields. The effect is attributed to the electron-hole scattering.


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