TITLE

Hot-electron capture to DX centers in AlxGa1-xAs at low Al mole fractions (x<0.2)

AUTHOR(S)
Theis, T. N.; Parker, B. D.; Solomon, P. M.; Wright, S. L.
PUB. DATE
December 1986
SOURCE
Applied Physics Letters;12/1/1986, Vol. 49 Issue 22, p1542
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report quantitative studies of hot-electron trapping by DX centers in short channel GaAs/n-AlxGa1-x As field-effect transistors. A remarkable result is that persistent hot-electron capture occurs even at very low values of the Al mole fraction, x<=0.2, where thermal capture is not observed. Thermal emission studies confirm that the trap state is associated with the DX center. Thus, for x<=0.2 the trap state is metastable, but can be persistently populated by heating the free electrons with an electric field. This and other features of the capture process support a large lattice relaxation model of the center.
ACCESSION #
9821553

 

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