TITLE

Reversibility of recombination-induced defect reactions in amorphous Si:H

AUTHOR(S)
Redfield, David
PUB. DATE
December 1986
SOURCE
Applied Physics Letters;12/1/1986, Vol. 49 Issue 22, p1517
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Recombination-induced defect reactions are reversible in principle; i.e., any recombination (or trapping) process that induces defect formation can also induce recovery of that defect. This reversibility principle applies to crystalline and amorphous semiconductors. Although the rates in the two directions are generally quite different, evidence is cited indicating that in hydrogenated amorphous silicon they may be comparable, and offer new explanations for several observations. Illustrative rate equations are presented along with a series of testable experimental predictions.
ACCESSION #
9821534

 

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