Influence of oxygen implantation conditions on the properties of a high-temperature-annealed silicon-on-insulator material

Golanski, A.; Perio, A.; Grob, J. J.; Stuck, R.; Maillet, S.; Clavelier, E.
November 1986
Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1423
Academic Journal
A silicon-on-insulator (SOI) structure was formed by implanting 150 keV O+ ions into a single-crystal, n-type Si. The substrate temperature during implantation, Ti, was regulated within the range of 450–750 °C. Implanted samples were subsequently annealed at 1300 °C for 2–5 h and analyzed using transmission electron microscopy, Rutherford backscattering, the spreading resistance probe, and secondary ion mass spectroscopy. It is shown that the substrate temperature during oxygen implantation strongly influences the properties of the SOI structure after the high-temperature annealing: the residual oxygen concentration within the Si surface layer strongly depends on Ti and correlates with the carrier density, indicating the presence of oxygen-related thermal donors.


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