TITLE

Limitations to the open circuit voltage of amorphous silicon solar cells

AUTHOR(S)
Hack, M.; Shur, M.
PUB. DATE
November 1986
SOURCE
Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1432
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this paper, we investigate the open circuit voltage of amorphous silicon alloy p-i-n and n-i-p solar cells and show that the low open circuit voltage of some devices can be caused by a built-in potential smaller than normal arising from a low band-gap p+ layer. For these solar cells, in good agreement with experimental data, the introduction of a boron profile in 200–500 Å of the intrinsic region near the p+-i interface can enhance the open circuit voltage by about 150–200 mV to a value close to the bulk recombination limit.
ACCESSION #
9821512

 

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