Thermal donor formation in electron-irradiated Czochralski silicon

Svensson, Johan; Svensson, Bengt G.; Lindström, J. Lennart
November 1986
Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1435
Academic Journal
Isothermal heat treatment of Czochralski silicon samples has been performed at 450 °C. Prior to this treatment some samples were irradiated by high-energy electrons (2.0 MeV) and subsequently annealed at 311 °C. As a result, a high concentration of vacancy-dioxygen pairs was obtained. By a comparison of the thermal donor formation kinetics observed in the pretreated samples with that in as-grown samples, the vacancy-dioxygen pair can be ruled out as a ‘‘core’’ for thermal donors. A vacancy-trioxygen pair, which occurs as a result of the annealing of the vacancy-dioxygen pair, is also discussed.


Related Articles

  • Nickel in silicon studied by electron paramagnetic resonance. Effey-Schwickert, B.; Wiegand, M.; Vollmer, H.; Labusch, R. // Applied Physics A: Materials Science & Processing;2003, Vol. 77 Issue 5, p711 

    We have investigated nickel in silicon samples with a wide range of initial doping concentrations by EPR, DLTS and photo-EPR techniques. Our results show that the two different Ni-centers which were observed previously by EPR, but whose structure could not be interpreted unambiguously, are both...

  • Modeling the emission red-shift in amorphous semiconductors and in organic-inorganic hybrids using extended multiple trapping. Ferreira, R. A. S�; Ferreira, A. L.; Carlos, L. D. // European Physical Journal B -- Condensed Matter;Apr2006, Vol. 50 Issue 3, p371 

    A model of thermal relaxation within localized states based on the extended multiple trapping framework is used to describe the red-shift of the emission maximum intensity as the excitation energy decreases. The model is applied to amorphous hydrogenated silicon (a-Si:H) and to organic-inorganic...

  • Manufacturing integration considerations of through-silicon, via etching. Lassig, Steve // Solid State Technology;Dec2007, Vol. 50 Issue 12, p48 

    The article examines the manufacturing considerations regarding the integration of through-silicon vias (TSV) in advanced three-dimensional integrated circuit (3D IC) designs. Etch requirements for various integration schemes were summarized. Via-first before front end of line (feol), Via-first...

  • Reassessment of the recombination properties of aluminium-oxygen complexes in n- and p-type Czochralski-grown silicon. Sun, Chang; Rougieux, Fiacre E.; Degoulange, Julien; Einhaus, Roland; Macdonald, Daniel // Physica Status Solidi (B);Oct2016, Vol. 253 Issue 10, p2079 

    The recombination parameters of aluminium-oxygen complexes in silicon have been reassessed by applying lifetime spectroscopy on several n- and p-type intentionally Al-contaminated and control samples, using a single-level defect model. The presence of the control samples has allowed greater...

  • Anomalous behaviors of E1/E2 deep level defects in 6H silicon carbide. Chen, X. D.; Ling, C. C.; Gong, M.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Skorupa, W. // Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p031903 

    Deep level defects E1/E2 were observed in He-implanted, 0.3 and 1.7 MeV electron-irradiated n-type 6H–SiC. Similar to others’ results, the behaviors of E1 and E2 (like the peak intensity ratio, the annealing behaviors or the introduction rates) often varied from sample to sample....

  • Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer. Okba, F.; Cherkashin, N.; Di, Z.; Nastasi, M.; Rossi, F.; Merabet, A.; Claverie, A. // Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p031917 

    We have quantitatively studied by transmission electron microscopy the growth kinetics of platelets formed during the continuous hydrogenation of a Si substrate/SiGe/Si heterostructure. We have evidenced and explained the massive transfer of hydrogen from a population of platelets initially...

  • The effect of oxide precipitates on minority carrier lifetime in p-type silicon. Murphy, J. D.; Bothe, K.; Olmo, M.; Voronkov, V. V.; Falster, R. J. // Journal of Applied Physics;Sep2011, Vol. 110 Issue 5, p053713 

    Transient and quasi-steady-state photoconductance methods were used to measure minority carrier lifetime in ∼10 ࡎ cm p-type Czochralski silicon processed in very clean conditions to contain oxide precipitates. The nucleation and growth times for precipitation were varied to produce 35...

  • Current through SiO2 gate oxide and its low frequency fluctuations: Trapping on charged dangling bonds with negative Hubbard U. Moyzhes, Boris; Geballe, Theodore H.; Jeong, Steve; Gitlin, Daniel; Karp, James // Journal of Applied Physics;4/1/2005, Vol. 97 Issue 7, p074104 

    An estimate of Hubbard U supports instability of neutral one-electron Si dangling bonds in SiO2 and the formation of charged two-electron and two-hole negative U centers through the reaction •Si=+•Si=→Si++••Si-. The trapping on these negative U centers creates and...

  • Quantum simulation of noise in silicon nanowire transistors. Park, Hong-Hyun; Jin, Seonghoon; Park, Young June; Min, Hong Shick // Journal of Applied Physics;Jul2008, Vol. 104 Issue 2, p023708 

    The noise phenomena of silicon nanowire transistors are investigated through quantum transport simulations. Under the assumption of phase-coherent transport, the scattering approach and the nonequilibrium Green’s function formalism are employed. We present the drain current and noise...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics