Long term storage of inversion holes at a superlattice/GaAs interface

Melloch, M. R.; Qian, Q-D.; Cooper, J. A.
November 1986
Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1471
Academic Journal
We report an investigation of the long term retention characteristic of a hole inversion layer at the interface between an AlAs/GaAs superlattice and GaAs in the dark. The retention time constant at 77 K is measured to be 34 h. From the temperature dependence of the retention time constant, an effective valence-band discontinuity of 0.17 eV is obtained.


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