TITLE

Low threshold 1.51 μm InGaAsP buried crescent injection lasers with semi-insulating current confinement layer

AUTHOR(S)
Cheng, W. H.; Su, C. B.; Buehring, K. D.; Chien, C. P.; Ure, J. W.; Perrachione, D.; Renner, D.; Hess, K. L.; Zehr, S. W.
PUB. DATE
November 1986
SOURCE
Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1415
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A hybrid growth technique has been used to fabricate low threshold 1.51 μm InGaAsP buried crescent injection lasers with a semi-insulating current confinement layer. The technique involves a first stage of low pressure metalorganic chemical vapor deposition followed by a liquid phase epitaxy stage. The lasers exhibit cw threshold currents as low as 12 mA at 25 °C, high yield, differential quantum efficiency over 41%, and output power more than 18 mW. Small-signal modulation response to 3.5 GHz has been obtained. The lasers show an initial small degradation rate of 1%/kh at 50 °C which gives an estimated operating lifetime of 47 years at 25 °C.
ACCESSION #
9821463

 

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