TITLE

Annealing kinetics during rapid and classical thermal processing of a laser induced defect in n-type silicon

AUTHOR(S)
Adekoya, W. O.; Muller, J. C.; Siffert, P.
PUB. DATE
November 1986
SOURCE
Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1429
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The annealing kinetics of the dominant defect [E(0.32 eV), σn=8×10-16 cm-2] induced in virgin Czochralski-grown n-type <100> 1–5 Ω cm silicon by Nd-YAG laser (1.6 J cm-2, 0.53 μm) irradiation has been studied within the temperature range 500–650 °C using rapid and conventional thermal processing. With deep level transient spectroscopy measurements, we have observed an annealing rate increase about 30 times faster in the rapid thermal annealed (RTA) samples, than in those heat treated in a conventional furnace (CTA) with an activation energy difference ΔEA[bar_over_tilde:_approx._equal_to]0.31 eV between the two processes, the latter requiring the higher energy. This difference results from ionization-enhanced annealing of this defect during RTA processing, a phenomenon which is markedly reduced in CTA-processed samples.
ACCESSION #
9821460

 

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