Annealing kinetics during rapid and classical thermal processing of a laser induced defect in n-type silicon

Adekoya, W. O.; Muller, J. C.; Siffert, P.
November 1986
Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1429
Academic Journal
The annealing kinetics of the dominant defect [E(0.32 eV), σn=8×10-16 cm-2] induced in virgin Czochralski-grown n-type <100> 1–5 Ω cm silicon by Nd-YAG laser (1.6 J cm-2, 0.53 μm) irradiation has been studied within the temperature range 500–650 °C using rapid and conventional thermal processing. With deep level transient spectroscopy measurements, we have observed an annealing rate increase about 30 times faster in the rapid thermal annealed (RTA) samples, than in those heat treated in a conventional furnace (CTA) with an activation energy difference ΔEA[bar_over_tilde:_approx._equal_to]0.31 eV between the two processes, the latter requiring the higher energy. This difference results from ionization-enhanced annealing of this defect during RTA processing, a phenomenon which is markedly reduced in CTA-processed samples.


Related Articles

  • Laser blasts speed solar-cell production. Scott, David // Popular Science;Apr82, Vol. 220 Issue 4, p93 

    The article discusses the techniques for speed solar cell production. It mentions that laser technique, which is cheaper, faster and avoids heating the polysilicon and thereby spoiling its crystalline structure. It also involves blasting the silicon with phosphorus atoms accelerated by high...

  • Simultaneous nickel silicidation and silicon crystallization induced by excimer laser annealing on plastic substrate. Alberti, A.; La Magna, A.; Cuscunà, M.; Fortunato, G.; Privitera, V. // Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p142113 

    Ni–Si reaction and α-Si crystallization on polyimide were simultaneously induced by excimer laser annealing. A ∼8 nm Ni film was deposited on Si in such a way that Ni atoms were also distributed within the α-Si layer. The role of Ni atoms during crystallization and surface...

  • Enhancement of light emission from silicon nanocrystals by post-O2-annealing process. Park, Byoung Youl; Lee, Sol; Park, Kyoungwan; Bae, Chang Hyun; Park, Seung Min // Journal of Applied Physics;Jan2010, Vol. 107 Issue 1, p014314 

    This study investigated the effects of the post-O2-annealing process on light emission from silicon nanocrystals. Using pulsed laser ablation in an O2-filled atmosphere, the SiOx (x<2) thin layers were synthesized prior to O2-annealing. We observed a strong photoluminescence from the silicon...

  • Photoexcited Fano interaction in laser-etched silicon nanostructures. Kumar, Rajesh; Mavi, H. S.; Shukla, A. K.; Vankar, V. D. // Journal of Applied Physics;3/15/2007, Vol. 101 Issue 6, p064315 

    Photoexcitation dependent Raman studies on the optical phonon mode in silicon nanostructures (Si NS) prepared by laser-induced etching are done here. The increase in the asymmetry of the Raman spectra on the increasing laser power density is attributed to Fano interference between discrete...

  • Deactivation kinetics of supersaturated boron:silicon alloys. Luo, Weiwei; Yang, Shenzhi; Clancy, Paulette; Thompson, Michael O. // Journal of Applied Physics;9/1/2001, Vol. 90 Issue 5 

    The effect of laser annealing on the electrical activity of boron-doped silicon wafers has been investigated as a function of boron concentration, annealing time, and annealing temperature (from 600 °C to 1050 °C). Metastable supersaturated alloys were produced by the laser annealing of...

  • Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing. Sharp, J. A.; Smith, A. J.; Webb, R. P.; Kirkby, K. J.; Cowern, N. E. B.; Giubertoni, D.; Gennaro, S.; Bersani, M.; Foad, M. A.; Fazzini, P. F.; Cristiano, F. // Applied Physics Letters;2/25/2008, Vol. 92 Issue 8, p082109 

    The effects of surface proximity and B concentration on end-of-range defect formation during nonmelt laser annealing in preamorphized silicon have been studied. These effects were analyzed by observing the activation and diffusion of an ultrashallow B implant, using Hall effect and secondary ion...

  • Effect of a Fullerene Coating on the Photoluminescence of Porous Silicon. Sreseli, O.M.; Goryachev, D.N.; Belyakov, L.V.; Vul', S.P.; Zakharova, I.B.; Alekseeva, E.A. // Semiconductors;Jan2004, Vol. 38 Issue 1, p120 

    The interaction of a matrix of silicon nanocrystallites (porous silicon layer) with embedded fullerene molecules C[sub 60] was studied. The degradation of fullerene-containing layers as a result of irradiation with a strongly absorbed laser light was explored. It is shown that the layers with...

  • Synthesis of crystalline Si quantum dots by millisecond laser irradiation of SiOxNy layers. Mannino, Giovanni; Spinella, Corrado; Bongiorno, Corrado; Nicotra, Giuseppe; Mercorillo, Flora; Privitera, Vittorio; Franzò, Giorgia; Piro, Alberto Maria; Grimaldi, MariaGrazia; Di Stefano, Maria Ausilia; Di Marco, Silvestra // Journal of Applied Physics;Jan2010, Vol. 107 Issue 2, p023703 

    We demonstrated that the timescale for Si quantum dot (Si-QD) formation in a SiOxNy layer is a few milliseconds by IR laser irradiation. The amount of Si agglomerated into QD in a laser irradiated SiOxNy layer is comparable to that calculated after furnace annealing at 1250 °C for 30 min....

  • Excimer laser annealing of amorphous and solid-phase-crystallized silicon films. Miyasaka, Mitsutoshi; Stoemenos, John // Journal of Applied Physics;11/15/1999, Vol. 86 Issue 10, p5556 

    Presents a study which focused on the applicability of solid phase crystallization and excimer laser annealing to thin silicon films. Methodology; Results and discussion; Conclusions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics