Photoluminescence in CdTe grown on GaAs substrates by molecular beam epitaxy

Leopold, D. J.; Ballingall, J. M.; Wroge, M. L.
November 1986
Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1473
Academic Journal
Single-crystal epitaxial layers of (100) and (111) oriented CdTe were grown on (100) oriented GaAs substrates by molecular beam epitaxy. Low-temperature (4.2 K) photoluminescence spectra exhibit free-exciton and bound-exciton peaks having linewidths on the order of 2 meV for both CdTe crystallographic orientations. However, defect-related photoluminescence is found to be stronger in (100) oriented CdTe.


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