Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping

Mitsuyu, T.; Ohkawa, K.; Yamazaki, O.
November 1986
Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1348
Academic Journal
Low-energy ion doping of nitrogen has been employed in the molecular beam epitaxial (MBE) growth of ZnSe on GaAs substrates in an attempt to obtain p-type crystals. Low-temperature photoluminescence (PL) measurements of the N-doped ZnSe indicated a formation of shallow acceptors with an activation energy around 110 meV. The PL spectrum in the excitonic emission region was dominated by an acceptor bound-exciton emission I1 at 2.790 eV, suggesting a remarkable increase of an acceptor concentration in comparison with the previous work by MBE using a neutral doping source.


Related Articles

  • Quantum confinement and strain effects in ZnSe-ZnSxSe1-x strained-layer superlattices. Mohammed, K.; Olego, D. J.; Newbury, P.; Cammack, D. A.; Dalby, R.; Cornelissen, H. // Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1820 

    A photoluminescence study of ZnSe-ZnSxSe1-x strained-layer superlattices with x=0.19 grown by molecular beam epitaxy is presented. We observe clear shifts of the excitons to higher energies as the well widths are reduced. These shifts are interpreted in terms of quantum confinement effects using...

  • Photoluminescence properties of nitrogen-doped ZnSe grown by molecular beam epitaxy. Park, R. M.; Mar, H. A.; Salansky, N. M. // Journal of Applied Physics;7/15/1985, Vol. 58 Issue 2, p1047 

    Presents a study on the photoluminescence properties of nitrogen-doped zinc selenide (ZnSe) grown by molecular beam epitaxy. Potential of ZnSe to become an important material for the fabrication of blue electroluminescent devices; Typical spectrum obtained from a unintentionally doped ZnSe...

  • Picosecond transient photoluminescence spectra of ZnSe-ZnS strained-layer superlattices grown on.... Jie Cui; Hai-Long Wang // Applied Physics Letters;9/28/1992, Vol. 61 Issue 13, p1540 

    Examines the picosecond transient photoluminescence spectra of zinc selenide-zinc sulphide strained-layer superlattices on gallium arsenide(001) by molecular beam epitaxy. Relationship between exciton lifetime and well width; Impact of recombination enhancement on carrier lifetimes; Implication...

  • An optical method for evaluation of the net acceptor concentration in p-type ZnSe. Hu, B.; Yin, A.; Karczewski, G.; Luo, H.; Short, S. W.; Samarth, N.; Dobrowolska, M.; Furdyna, J. K. // Journal of Applied Physics;9/15/1993, Vol. 74 Issue 6, p4153 

    Proposes a method for making quick and contactless estimates of the net acceptor concentration in p-type zinc selenide epilayers from photoluminescence measurements. Photoluminescence of the p-type zinc selenide epilayers grown by molecular beam epitaxy; Factors influencing the intensity ratio...

  • Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers. Zhu, Z. M.; Li, G. H. // Journal of Applied Physics;2/1/1999, Vol. 85 Issue 3, p1775 

    Presents information on a study which investigated the photoluminescence properties of nitrogen-doped ZnSe epilayers grown by molecular beam epitaxy. Experimental details; Results and discussion; Conclusions.

  • Photoluminescence excitation study of nitrogen-doped zinc selenide epilayers. Moldovan, M.; Giles, N. C. // Journal of Applied Physics;5/1/1999, Vol. 85 Issue 9, p6723 

    Studies the nitrogen-doped zinc selenide grown by molecular beam epitaxy using photoluminescence excitation spectroscopy at liquid temperature. Experimental details; Results and discussion.

  • Photoluminescence characterization of ZnSe doped with Ga by bulk and planar doping techniques in molecular-beam epitaxy. Skromme, B. J.; Shibli, S. M.; de Miguel, J. L.; Tamargo, M. C. // Journal of Applied Physics;5/15/1989, Vol. 65 Issue 10, p3999 

    Presents a study which compared the photoluminescence properties of conventionally gallium-doped molecular beam epitaxy zinc selenide with those of planar gallium-doped samples. Experimental details; Results; Discussion; Conclusions.

  • Photoluminescence properties of nitrogen-doped ZnSe grown by molecular-beam epitaxy. Ziqiang Zhu; Takebayashi, Kazuhisa; Tanaka, Kiyotake; Ebisutani, Takashi; Kawamata, Junji; Yao, Takafumi // Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p91 

    Examines the photoluminescence properties of nitrogen-doped zinc selenide epilayers grown by molecular beam epitaxy. Use of a microwave plasma source for nitrogen doping; Determination of the compensation effect caused by nitrogen-associated donors; Production of active nitrogen flux.

  • Metalorganic molecular-beam epitaxy of ZnSe and ZnS. Ando, Hideyasu; Taike, Akira; Konagai, Makoto; Takahashi, Kiyoshi // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1251 

    Demonstrates the metalorganic molecular-beam epitaxial growth of zinc selenide and zinc sulfide on gallium arsenide. Dependence of the growth rate on various growth conditions; Differences in growth kinetics and in crystallinity between H[sub2]S-based and diethylsulfide-based zinc sulfide;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics