TITLE

Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping

AUTHOR(S)
Mitsuyu, T.; Ohkawa, K.; Yamazaki, O.
PUB. DATE
November 1986
SOURCE
Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1348
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-energy ion doping of nitrogen has been employed in the molecular beam epitaxial (MBE) growth of ZnSe on GaAs substrates in an attempt to obtain p-type crystals. Low-temperature photoluminescence (PL) measurements of the N-doped ZnSe indicated a formation of shallow acceptors with an activation energy around 110 meV. The PL spectrum in the excitonic emission region was dominated by an acceptor bound-exciton emission I1 at 2.790 eV, suggesting a remarkable increase of an acceptor concentration in comparison with the previous work by MBE using a neutral doping source.
ACCESSION #
9821437

 

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