Photoinduced surface morphology improvement and preferential orientation enhancement in film deposition of evaporated ZnS

Yokoyama, Hiroyuki
November 1986
Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1354
Academic Journal
Surface photoionization durign the deposition of evaporated ZnS resulted in surface morphology improvement and preferential orientation enhancement of films deposited on quartz and sapphire substrates. Such film quality improvement was induced with very low intensity light as long as photon energy was greater than the band-gap energy of deposited ZnS. These features of the photoinduced effect suggest that enhancement of surface adatom rearrangement occurs through a certain nonthermal process resulting from an excited carrier. Such a nonthermal effect is essentially important for lowering the epitaxial growth temperature.


Related Articles

  • Density of ZnS thin films grown by atomic layer epitaxy. Oikkonen, M.; Tuomi, T.; Luomajärvi, M. // Journal of Applied Physics;2/15/1988, Vol. 63 Issue 4, p1070 

    Focuses on a study which examined the density of zinc sulphide thin films. Techniques in determining the density of atomic layer epitaxy; Methodology; Results and discussion.

  • The effects of KrF pulsed laser and thermal annealing on the crystallinity and surface morphology... Masito, E. A.; Craven, M. R. // Journal of Applied Physics;9/1/1999, Vol. 86 Issue 5, p2562 

    Presents information on a study which investigated the crystallinity and surface morphology of zinc sulphide doped-with-manganese thin films using x-ray diffraction and atomic force microscopy analysis. Experimental and analysis conditions; Results and discussion; Conclusions.

  • The thickness dependency of the dielectric constant in certain thin-film dielectrics. Feldman, Charles // Journal of Applied Physics;1/15/1989, Vol. 65 Issue 2, p872 

    Presents a study that discussed an anomalous peak in the dielectric constant in zinc sulfide thin films observed in 1962 in light of an observation of a similar phenomenon in BaTiO[sub3] films in 1987. Explanations for such peak; Description of the peak observed in zinc sulfide films;...

  • The Formation of a Voltage–Luminance Characteristic of Zinc Sulfide Based Electroluminescent Thin-Film Emitters. Gurin, N. T.; Shlyapin, A. V.; Sabitov, O. Yu. // Technical Physics Letters;Nov2001, Vol. 27 Issue 11, p956 

    The formation of a voltage-luminance characteristic of zinc sulfide based electroluminescent thinfilm emitters was studied by measuring the instantaneous brightness and current kinetics in an active regime together with the mean field kinetics in the phosphor layer, the charge dependence of the...

  • The Effect of Photoexcitation of the Electrical Properties of ZnS:Mn Thin-Film Emitters. Gurin, N. T.; Shlyapin, A. V.; Sabitov, O. Yu.; Ryabov, D. V. // Technical Physics Letters;Feb2003, Vol. 29 Issue 2, p134 

    Significant distinctions have been observed in the current kinetics and current-voltage characteristics of ZnS :Mn electroluminescent thin-film emitters measured with pulsed photoexcitation in different (blue, red, and infrared) spectral intervals. The results show evidence that a recharge of...

  • Chemically Produced ZnS : Cu Films: Structure, Properties, and Mechanism of Electroluminescence. Khomchenko, V. S.; Zavyalova, L. V.; Roshchina, N. N.; Svechnikov, G. S.; Prokopenko, I. V.; Rodionov, V. E.; Lytvyn, P. M.; Lytvyn, O. S.; Tsyrkunov, Yu. A. // Technical Physics;Aug2002, Vol. 47 Issue 8, p978 

    ZnS: Cu films are prepared with a chemical nonvacuum technique by joint pyrolysis of zinc and copper dithiocarbamates at a substrate temperature between 260 and 300°C. It is shown that the films have the hexagonal lattice and are polycrystalline, with grains oriented mostly in the...

  • Pockels’ effect in polycrystalline ZnS planar waveguides. Wong, B.; Jessop, P. E.; Kitai, A. H. // Journal of Applied Physics;8/1/1991, Vol. 70 Issue 3, p1180 

    Presents a study that demonstrated the Pocket's effect in thermally evaporated polycrystaline thin films on zinc sulphide planar waveguides. Details of the experiment; Results and discussion; Conclusion.

  • Laser Photoionization Spectroscopy of the Zinc Atom and the Study of Zinc Sulfide Evaporation. Tukhlibaev, O.; Alimov, U. Zh. // Optics & Spectroscopy;Apr2000, Vol. 88 Issue 4, p506 

    The frequencies of 5s ³S[sub 1] - np ³P[sub 1] Rydberg transitions, quantum defects for n = 15-50, and energies of high-lying P states of the Zn atom were measured by three-step laser excitation with subsequent ionization by a pulsed electric field. Free Zn atoms were produced through...

  • Negative Differential Resistance in Thin-Film Electroluminescent Emitters Based on Zinc Sulfide. Gurin, N. T.; Shlyapin, A. V.; Sabitov, O. Yu. // Technical Physics;Mar2001, Vol. 46 Issue 3, p342 

    S- and N-type negative differential resistance (NDR) has been observed in thin-film electroluminescent emitters based on zinc sulfide doped with manganese, and conditions for its emergence have been identified. It has been found that when a negative half-wave of voltage is applied to the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics