Residual acceptor assessment in as-grown bulk GaAs by Raman and selective pair luminescence spectroscopy: A comparative study

Wagner, J.; Ramsteiner, M.
November 1986
Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1369
Academic Journal
Electronic Raman scattering and selective pair luminescence spectroscopy have been used to characterize residual acceptors in bulk-grown GaAs. Both techniques are compared by studying the same set of samples cut from undoped semi-insulating material. The Raman spectra from shallow acceptors were excited with the 1064-nm line of a neodymium:yttrium aluminum garnet laser as well as with an infrared dye laser at ∼860 nm. Raman scattering has the advantage of being a quantitative tool whereas selective pair luminescence spectroscopy is found to be more sensitive (detection limit ∼1×1014 acceptors/cm3). The latter technique is strongly facilitated by using an optical multichannel detection system. This study demonstrates that the combination of both techniques is necessary for the sensitive and quantitative characterization of residual acceptors in as-grown bulk GaAs.


Related Articles

  • Raman scattering study of surface barriers in GaAs passivated in alcoholic sulfide solutions. Bessolov, Vasily N.; Lebedev, Mikhail V. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2640 

    Studies the variation of surface barriers in gallium arsenide due to sulfur passivation in solutions of ammonium sulfide in different alcohols using Raman scattering. Depletion layer width decreases; Efficiency of gallium arsenide electronic passivation.

  • Raman characterization of structural disorder and residual strains in micromachined GaAs. Pizani, P.S.; Jasinevicius, R.G. // Journal of Applied Physics;2/1/2000, Vol. 87 Issue 3, p1280 

    Focuses on a study that used Raman scattering to characterize structural disorder and strain effects in ductile-regime micromachined gallium arsenide monocrystalline samples. Positive frequency shift of the longitudinal and transverse optical phonons in the machined samples; Experimental...

  • Raman spectroscopic study of residual acceptors in semi-insulating bulk GaAs. Wagner, J.; Ramsteiner, M.; Seelewind, H.; Clark, J. // Journal of Applied Physics;7/15/1988, Vol. 64 Issue 2, p802 

    Presents a study which examined the residual shallow acceptors in undoped semi-insulating gallium arsenide grown by liquid-encapsulated Czochralski technique using electronic Raman scattering. Experimental details; Results and discussion; Conclusions.

  • Spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs. Wagner, J.; Wettling, W.; Windscheif, J.; Rothemund, W. // Journal of Applied Physics;6/15/1989, Vol. 65 Issue 12, p5225 

    Presents a study which examined the spatial distribution of residual shallow acceptors in undoped semi-insulating gallium arsenide by electronic Raman scattering. Methods; Results; Discussion.

  • Characterization of ion-implanted and rapidly thermal annealed GaAs by Raman scattering and van der Pauw measurement. Yoshida, Hiroshi; Katoda, Takashi // Journal of Applied Physics;6/15/1990, Vol. 67 Issue 12, p7281 

    Presents a study that examined the structures of gallium arsenide using Raman scattering and van der Pauw measurement. Evaluation of the shifts in the Raman spectra; Analysis of the dependence of the re-growth of gallium arsenide on the annealing temperature; Examination of the electrical...

  • Tabulation of the theoretical band-to-band luminescence spectra of heavily doped GaAs and application to experimental n-type GaAs spectra. Visser, R.; Lochs, H. G. M.; Giling, L. J. // Journal of Applied Physics;12/1/1990, Vol. 68 Issue 11, p5819 

    Presents a study that tabulated the theoretical band-to-band luminescence spectra of heavily doped gallium arsenide (GaAs). Approximation for the GaAs band structure; Characteristics of the heavily doped n-type GaAs crystals; Explanation for the arbitrary way in which k selection and no k...

  • Raman scattering in a near-surface n-GaAs layer implanted with boron ions. Avakyants, L. P.; Gorelik, V. S.; Temper, É. M.; Shcherbina, S. M. // Physics of the Solid State;Aug99, Vol. 41 Issue 8, p1369 

    Structure in the Raman scattering spectra of near-surface n-GaAs layers (n = 2 × 10[sup 18] cm[sup -3]) implanted with 100 keV B[sup +] ions in the dose range 3.1 × 10[sup 11]-1.2 × 10[sup 14] cm[sup -2] is investigated. The qualitative and quantitative data on the carrier density...

  • Micro-Raman Study of Surface Alterations in InGaAs after Thermal Annealing Treatments. Hernández, S.; Cuscó, R.; Artús, L.; Blanco, N.; Mártil, I.; González-Díaz, G. // International Journal of Modern Physics B: Condensed Matter Phys;11/20/2002, Vol. 16 Issue 28/29, p4401 

    We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing. Defects consisting of protruding material with typical dimensions of a few microns can be observed on the surface of the annealed samples. Micro-Raman measurements on these defects show that they...

  • Raman scattering determination of free-carrier concentration and surface space-charge layer in <100> n-GaAs. Shen, H.; Pollak, Fred H.; Sacks, R. N. // Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p891 

    We have used Raman scattering as a nondestructive, contactless method for determining not only the free-carrier concentration N but also the width of the space-charge layer in <100> n-GaAs with 4×1017 cm-3≤N≤1×1019 cm-3 using as an excitation several different wavelengths of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics