TITLE

Residual acceptor assessment in as-grown bulk GaAs by Raman and selective pair luminescence spectroscopy: A comparative study

AUTHOR(S)
Wagner, J.; Ramsteiner, M.
PUB. DATE
November 1986
SOURCE
Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1369
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electronic Raman scattering and selective pair luminescence spectroscopy have been used to characterize residual acceptors in bulk-grown GaAs. Both techniques are compared by studying the same set of samples cut from undoped semi-insulating material. The Raman spectra from shallow acceptors were excited with the 1064-nm line of a neodymium:yttrium aluminum garnet laser as well as with an infrared dye laser at ∼860 nm. Raman scattering has the advantage of being a quantitative tool whereas selective pair luminescence spectroscopy is found to be more sensitive (detection limit ∼1×1014 acceptors/cm3). The latter technique is strongly facilitated by using an optical multichannel detection system. This study demonstrates that the combination of both techniques is necessary for the sensitive and quantitative characterization of residual acceptors in as-grown bulk GaAs.
ACCESSION #
9821431

 

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