Epitaxial Hg1-xCdxTe growth by low-temperature metalorganic chemical vapor deposition

Lu, P.-Y.; Wang, C.-H.; Williams, L. M.; Chu, S. N. G.; Stiles, C. M.
November 1986
Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1372
Academic Journal
We report the first low-temperature metalorganic chemical vapor deposition of Hg1-xCdxTe using a thermal precracking technique. The precracking technique enables one to grow epitaxial Hg1-xCdxTe on CdTe substrates at temperatures as low as 225 °C. The growth rate is 1–2 μm/h. The film is epitaxial and has good morphology. The Hg1-xCdxTe epilayer also shows infrared transmission with a sharp cut-off edge. The Hg0.7Cd0.3Te material is n type and has a room-temperature mobility of 12 200 cm2/V s with carrier concentration of 2.7×1017 cm-3 and 77 K mobility of 27 000 cm2/V s with carrier concentration of 1.0×1017 cm-3. This low-temperature precracking technique offers the feasibility of fabricating structures with sharp heterojunctions for Hg1-xCdxTe compounds by metalorganic chemical vapor deposition.


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