TITLE

Depth distributions of hydrogen-implanted and annealed silicon

AUTHOR(S)
Wilson, R. G.
PUB. DATE
November 1986
SOURCE
Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1375
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have measured the redistribution of hydrogen as a function of annealing temperature in (100) and (111) Si implanted at 250 keV to a fluence of 1×1016 cm-2. The hydrogen profiles were measured using secondary ion mass spectrometry. Hydrogen (1H or 2H) begins to redistribute in hydrogen-implantation-damaged silicon between 300 and 325 °C, moving toward the surface through the implantation-damaged region at a density above 1018 cm-3. The implanted hydrogen begins to diffuse deeper into the undamaged bulk silicon at about 200 °C, but at densities below 1017 cm-3. The initial redistribution of hydrogen toward the surface is shown not to be associated with the regrowth of damage. A second phase of hydrogen redistribution, in which the density of the hydrogen distribution decreases, begins at about 550 °C, which is the temperature of the beginning of regrowth of damage. The density of the implanted hydrogen has decreased below∼1016 cm-3 by 800 °C, for initial implanted hydrogen densities of 1021 cm-3 or less. We also report range and profile shape factors for 1H and 2H atom depth distributions implanted into silicon for a few cases of ion energy and fluence.
ACCESSION #
9821426

 

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