Charge transfer enhancement of photoconductivity in hydrogenated amorphous Ge/Si multilayer films

Wronski, C. R.; Tiedje, T.; Persans, P.; Abeles, B.; Hicks, M.
November 1986
Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1378
Academic Journal
Enhancement of amorphous Ge photoconductivity is observed in hydrogenated amorphous Ge/Si (a-Ge:H/a-Si:H) multilayer structures. The increase in electron lifetimes is explained in terms of a novel sensitization effect due to transfer of trapped holes from the a-Ge:H to the a-Si[ATOTHER]@B:[/ATOTHER] H layers.


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