High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy

Miller, B. I.; Schubert, E. F.; Koren, U.; Ourmazd, A.; Dayem, A. H.; Capik, R. J.
November 1986
Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1384
Academic Journal
A series of GaInAs/InP quantum wells from 10 to 135 Å has been grown by atmospheric organometallic vapor phase epitaxy using pressure balancing techniques. These wells exhibit strong exciton peaks at 4 K and have quantized energy shifts of up to 326 meV. These energy shifts are compared with two simple finite well models (Kronig–Penney and envelope function approximation) using a conduction-band offset of Vc≊40% ΔEg(GaInAs) and are in close agreement with the latter model. The full width half-maximum linewidths indicate an average interface roughness of ≊1 monolayer.


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