Experimental measurement of a high-field dipole in GaAs field-effect transistors

Abeles, J. H.; Leheny, R. F.; Chang, G. K.; Allen, S. J.
November 1986
Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1387
Academic Journal
GaAs short channel metal-semiconductor field-effect transistor models predict the formation of a high-field dipole layer with current saturation. In this work, the formation of such a dipole at the onset of current saturation is experimentally verified through measurement of the high-frequency conductivity of the channel. The complex conductivity and its dependence on frequency are analyzed to yield the capacitance of the high-field domain and its dependence on source-drain voltage. The corresponding peak electric field in the domain is ∼1.5×105 V/cm under current saturation conditions. The implications of the formation of such a domain on the speed of response of these devices are discussed.


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