Transport and persistent photoconductivity in InGaAs/InP single quantum wells

Anderson, D. A.; Bass, S. J.; Kane, M. J.; Taylor, L. L.
November 1986
Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1360
Academic Journal
Hall effect and Shubnikov–de Haas data are presented for single 100 Å InGaAs/InP quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition. Both modulation doped and nominally undoped structures are studied. Measurements are made on the latter structures by using the low-temperature persistent photoconductivity to put carriers into the quantum well. Mobilities as high as 95 000 cm2/V s have been achieved at carrier densities of 9×1011 cm-2. The persistent photoconductivity effect is also used to study the dependence of mobility on carrier density and the data are analyzed in terms of ionized impurity and alloy disorder scattering.


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