Lateral solid phase epitaxy in selectively P-doped amorphous Si films

Ishiwara, Hiroshi; Tanaka, Makoto; Furukawa, Seijiro
November 1986
Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1363
Academic Journal
A selective doping method of P atoms is proposed in lateral solid phase epitaxy (L-SPE) of amorphous Si films, in which L-SPE mainly proceeds along the P-doped regions and active devices are fabricated in the undoped regions. It was found that diffusion of P atoms into the undoped region was negligible during L-SPE growth at 600 °C for about 20 h. Usefulness of this method was demonstrated by fabricating metal-oxide-semiconductor field-effect transistors in the films, in which the P-doped regions were used as the source and drain regions and the undoped region was used as a channel between them.


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