Reaction of titanium with silicon nitride under rapid thermal annealing

Morgan, A. E.; Broadbent, E. K.; Sadana, D. K.
November 1986
Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1236
Academic Journal
30–90 nm Ti films sputter deposited onto 50 nm Si3N4 have been rapid thermal annealed for 30 s in Ar and N2 ambients, and the phases formed identified using Auger electron spectroscopy, transmission electron microscopy, and electron diffraction. Reaction at 900 °C produces TiN surface and interfacial layers and an intermediate TiSi2 layer. The Ti-Si-N ternary phase diagram is used to explain the reaction sequence.


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