Electrical and optical properties of sputtered TiNx films as a function of substrate deposition temperature

Thorpe, T. P.; Qadri, S. B.; Wolf, S. A.; Claassen, J. H.
November 1986
Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1239
Academic Journal
Characterization results are given for a set of TiNx films grown on sapphire substrates at temperatures between 140 and 850 °C. A relationship between resistivity and spectral reflectivity is established, with highest reflectivities and lowest resistivities observed for the highest substrate temperatures. It is found that grain orientation within the films is random except at the highest deposition temperature where a preferred 100 orientation is indicated. Measurement of the superconducting transition temperature, lattice parameter, and microcrystalline texture of each film has been made and correlated with the stoichiometry, electrical, and optical properties.


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