‘‘New donors’’ in silicon: A quantum well controlled conductivity

Henry, A.; Pautrat, J. L.; Vendange, P.; Saminadayar, K.
November 1986
Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1266
Academic Journal
The first stages of the formation of the so called ‘‘new donors’’ is studied by annealing initially n-type Czochralski silicon at 580 °C for 24–360 h. The analysis of electrical properties using the admittance spectroscopy technique reveals that the freezing of carriers is controlled by an activation energy of 20 meV, and a discrete level is detected at 19 meV. These effects are tentatively ascribed to levels localized within quantum wells surrounding small positively charged oxide precipitates.


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