TITLE

‘‘New donors’’ in silicon: A quantum well controlled conductivity

AUTHOR(S)
Henry, A.; Pautrat, J. L.; Vendange, P.; Saminadayar, K.
PUB. DATE
November 1986
SOURCE
Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1266
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The first stages of the formation of the so called ‘‘new donors’’ is studied by annealing initially n-type Czochralski silicon at 580 °C for 24–360 h. The analysis of electrical properties using the admittance spectroscopy technique reveals that the freezing of carriers is controlled by an activation energy of 20 meV, and a discrete level is detected at 19 meV. These effects are tentatively ascribed to levels localized within quantum wells surrounding small positively charged oxide precipitates.
ACCESSION #
9821354

 

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