Amorphous SiN:H dielectrics with low density of defects

Hasegawa, S.; Matuura, M.; Kurata, Y.
November 1986
Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1272
Academic Journal
Amorphous SiNx:H films were prepared by rf glow discharge (GD) of SiH4-N2-H2 mixtures at 300 °C using a new decomposition technique. The optical gap Eg increases slowly with the ratio N2/SiH4 up to a critical gap Egc of 2.5–3.0 eV, and then rapidly increases up to 5.3 eV. The spin density Ns from electron spin resonance of Si dangling bonds increases with N2/SiH4 until Eg reaches Egc. Above Egc, Ns rapidly decreases in contrast with that of conventional GD films, but in similarity to pyrolytic films. The slope B in Tauc equation for optical absorption corresponds well with Ns.


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