TITLE

New native oxide of InP with improved electrical interface properties

AUTHOR(S)
Robach, Y.; Joseph, J.; Bergignat, E.; Commere, B.; Hollinger, G.; Viktorovitch, P.
PUB. DATE
November 1986
SOURCE
Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1281
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electrical properties of InP insulator interface were improved by using a new native oxide between gate insulator and the semiconductor. This phosphorus-rich oxide identified as In(PO3)y polyphosphate was grown anodically. Capacitance-voltage measurements on this metal-insulator-semiconductor structure yielded an interface state density as low as 4×1010 cm-2 eV-1 and were nearly free of hysteresis in the depletion and accumulation region.
ACCESSION #
9821343

 

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