New native oxide of InP with improved electrical interface properties

Robach, Y.; Joseph, J.; Bergignat, E.; Commere, B.; Hollinger, G.; Viktorovitch, P.
November 1986
Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1281
Academic Journal
The electrical properties of InP insulator interface were improved by using a new native oxide between gate insulator and the semiconductor. This phosphorus-rich oxide identified as In(PO3)y polyphosphate was grown anodically. Capacitance-voltage measurements on this metal-insulator-semiconductor structure yielded an interface state density as low as 4×1010 cm-2 eV-1 and were nearly free of hysteresis in the depletion and accumulation region.


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