Fabrication of small laterally patterned multiple quantum wells

Scherer, A.; Craighead, H. G.
November 1986
Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1284
Academic Journal
A technique of high voltage electron beam lithography and BCl3/Ar reactive ion etching for laterally patterning GaAs/Al0.3Ga0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.


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