TITLE

Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides

AUTHOR(S)
Warren, W. L.; Lenahan, P. M.
PUB. DATE
November 1986
SOURCE
Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1296
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We find that two paramagnetic ‘‘trivalent silicon’’ centers appear to be responsible for damage resulting from Fowler–Nordheim injection of electrons into thermal oxides on silicon.
ACCESSION #
9821334

 

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