Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides

Warren, W. L.; Lenahan, P. M.
November 1986
Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1296
Academic Journal
We find that two paramagnetic ‘‘trivalent silicon’’ centers appear to be responsible for damage resulting from Fowler–Nordheim injection of electrons into thermal oxides on silicon.


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