Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wells

Miller, R. C.; Tu, C. W.; Sputz, S. K.; Kopf, R. F.
November 1986
Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1245
Academic Journal
Low-temperature excitation and photoluminescence spectra are described for single GaAs/Al0.37Ga0.63As quantum wells grown by molecular beam epitaxy with and without a 2-min interruption of growth at the heterointerfaces. The spectra from samples grown with interruption include well-resolved multiple sharp peaks which are due to changes in well thickness of one monolayer and to bound excitons. These peaks are as narrow as 1.0, 1.7, and 6.0 meV for single wells of width 57, 28, and 17 Ã…, respectively.


Related Articles

  • Photoluminescence of Anti-Modulation-Doped GaAs/AlGaAs Single Quantum Well Structures Exposed to Hydrogen Plasma. Bumaı, Yu. A.; Gobsch, G.; Goldhahn, R.; Stein, N.; Golombek, A.; Nakov, V.; Cheng, T. S. // Semiconductors;Feb2002, Vol. 36 Issue 2, p203 

    Techniques of low-temperature photoluminescence (PL), photoluminescence excitation, and photoreflectance were used to study the effect of hydrogen plasma treatment at 260°C on antimodulation Si-doped GaAs/AlGaAs heterostructures with near-surface single quantum wells (QWs) grown by...

  • Photoluminescence of localized exitons in coherently strained ZnS–ZnSe/GaAs(001) quantum wells. Tishchenko, V. V.; Bondar, N. V.; Brodyn, M. S.; Kovalenko, A. V. // Semiconductors;Dec97, Vol. 31 Issue 12, p1244 

    The low-temperature photoluminescence (PL) of ZnS-ZnSe heterostructures grown in the form of single quantum wells (QW) by the non-conventional technology of photo-assisted vapor phase epitaxy has been investigated. It is shown that the inhomogeneity of the quantum wells can be explained in terms...

  • Annihilation of nonradiative recombination centers in GaAs/AlGaAs multiquantum well structures as a result of exposure to plasma. Zhuravlev, K. S.; Kolosanov, V. A.; Marahovka, I. I.; Holland, M. // Semiconductors;Dec97, Vol. 31 Issue 12, p1241 

    The effect of exposure to a low-energy plasma (CF[sub 4], Ar, Kr) on the photoluminescence properties of GaAs/AlGaAs multiquantum well structures is examined. It is shown that the photoluminescence of the quantum wells in the surface region is quenched after plasma exposure and the depth of this...

  • Temperature Dependence of Photoluminescence of Flat and Undulated SiGe/Si Multiple Quantum Wells. Cheng, B. W.; Zhang, J. G.; Zuo, Y. H.; Mao, R. W.; Huang, C. J.; Luo, L. P.; Yao, F.; Wang, Q. M. // International Journal of Modern Physics B: Condensed Matter Phys;11/20/2002, Vol. 16 Issue 28/29, p4211 

    Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant...

  • Quantum Theory of Photoluminescence for Coherently Excited Semiconductor Quantum-Well Systems. Kira, M.; Jahnke, F.; Koch, S. W. // Journal of Nonlinear Optical Physics & Materials;Mar1999, Vol. 8 Issue 1, p21 

    Photoluminescence of semiconductor quantum wells is studied using a fully quantized theory for the light-matter interaction. Quantum fluctuations of the light field lead to direct coupling between a coherent excitation and luminescence in other directions. Numerical results for the time...

  • Mid-infrared emissions from In(Ga)As quantum wells grown on GaP/Si(001) substrates. Gu, Y.; Huang, W. G.; Zhang, J.; Chen, X. Y.; Ma, Y. J.; Huang, H.; He, G. X.; Zhang, Y. G. // AIP Advances;Dec2018, Vol. 8 Issue 12, pN.PAG 

    This work reports on the approach of metamorphic In(Ga)As quantum wells on GaP/Si(001) substrates for Si-based mid-infrared applications. Metamorphic InP and In0.83Al0.17As templates are grown on Si, and room temperature photoluminescence emissions at 2.1 μm and 2.6 μm have been...

  • Photoluminescence study of critical thickness of pseudomorphic quantum wells grown on small area... Yao Zou; Grodzinski, Piotr; Osinski, Julian S.; Dapkus, P. Daniel // Applied Physics Letters;2/18/1991, Vol. 58 Issue 7, p717 

    Presents a photoluminescence (PL) study of critical thickness of pseudomorphic quantum wells (QW) grown on small area mesa stripes. Use of PL to characterize the optical properties of as-grown QW; Percentage of growth compared to growth on the planar substrate.

  • Linear optical properties of quantum wells composed of all-binary InAs/GaAs... Hasenberg, T.C.; McCallum, D.S.; Huang, X.R.; Dawson, Martin D.; Boggess, Thomas F.; Smirl, Arthur L. // Applied Physics Letters;3/4/1991, Vol. 58 Issue 9, p937 

    Investigates the linear optical properties of a variety of (InAs/GaAs)-GaAs multiple quantum well structures, where each well consists of a highly trained InAs/GaAs short-period superlattice. Observation of clearly resolved excitonic absorption peaks; Photoluminescence and excitonic absorption...

  • Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular... Sobiesierski, Z.; Clark, S.A.; Williams, R.H.; Tabata, A.; Benyattou, T.; Guillot, G.; Gendry, M.; Hollinger, G.; Viktorovitch, P. // Applied Physics Letters;4/29/1991, Vol. 58 Issue 17, p1863 

    Describes observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Indication of the formation of InAs quantum wells on the InP surface.

  • Strain-compensated strained-layer superlattices for 1.5 mum wavelength lasers. Miller, B.I.; Koren, U.; Young, M.G.; Chien, M.D. // Applied Physics Letters;5/6/1991, Vol. 58 Issue 18, p1952 

    Reports that strain-compensated strained-layer multiple quantum well structures have been grown by introducing opposite strain into the barrier layers. Improvement in the photoluminescence spectra shown by the structures; Current thresholds and quantum efficiencies exhibited by lasers...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics